Exploració per autor "Garin Escriva, Moises"
Ara es mostren els items 1-20 de 36
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3D metallo-dielectric structures combining electrochemical and electroplating techniques
Hernández Díaz, David; Lange, D.; Todorov Trifonov, Trifon; Garin Escriva, Moises; García Molina, Francisco Miguel; Rodríguez Martínez, Ángel; Alcubilla González, Ramón (2010-06)
Article
Accés restringit per política de l'editorialThree-dimensional (3D) periodic nickel micro-structures with a periodicity of 4 μm and high number of structural periods were fabricated by electrodeposition. Macroporous silicon, consisting of periodic arrays of sine-wave ... -
All-silicon spherical-Mie-resonator photodiode with spectral response in the infrared region
Garin Escriva, Moises; Fenollosa Esteve, Roberto; Alcubilla González, Ramón; Shi, Lei; Marsal Garvi, Luis Francisco; Meseguer Rico, Francisco Javier (2014-03-10)
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Accés obertSilicon is the material of choice for visible light photodetection and solar cell fabrication. However, due to the intrinsic band gap properties of silicon, most infrared photons are energetically useless. Here, we show ... -
Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency
Savin, Hele; Repo, Päivikki; von Gastrow, Guillaume; Ortega Villasclaras, Pablo Rafael; Calle, Eric; Garin Escriva, Moises; Alcubilla González, Ramón (2015-05-18)
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Accés obertThe nanostructuring of silicon surfaces—known as black silicon—is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might ... -
Black ultra-thin crystalline silicon wafers reach the 4n2 absorption limit–application to IBC solar cells
Garin Escriva, Moises; Pasanen, Toni P.; López Rodríguez, Gema; Vähänissi, Ville; Chen, Kexun; Martín García, Isidro; Savin, Hele (2023-09-27)
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Accés obertCutting costs by progressively decreasing substrate thickness is a common theme in the crystalline silicon photovoltaic industry for the last decades, since drastically thinner wafers would significantly reduce the ... -
Characterization of a-Si:H/c-Si interfaces by effective-lifetime measurements
Garin Escriva, Moises; Rau, U; Bredle, W; Martín García, Isidro; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-11)
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Accés restringit per política de l'editorialThis article studies theoretically and experimentally the recombination at the amorphous/crystalline silicon interface of a heterojunction with intrinsic thin layer (HIT) structure without metallization. We propose a ... -
Characterization of bifacial heterojunction Silicon solar cells obtained by Hot-Wire CVD
Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Fonrodona, Marta; Garin Escriva, Moises; Orpella García, Alberto; Vetter, Michael; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, F; Bertoeu, J; Andreu Batallé, Jordi (2006-07)
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Accés restringit per política de l'editorialIn this work, we study bifacial heterojunction silicon solar cells fabricated by hot-wire CVD on both p- and n-type crystalline silicon substrates. In these devices, hydrogenated microcrystalline silicon doped layers are ... -
Controlling Plateau-Rayleigh instabilities during the reorganization of silicon macropores in the Silicon Millefeuille process
Garin Escriva, Moises; Jin, Chen; Cardador Maza, David; Trifonov, T.; Alcubilla González, Ramón (Macmillan Publishers, 2017-08-03)
Article
Accés obertThe reorganization through high-temperature annealing of closely-packed pore arrays can be exploited to create ultra-thin (<20 µm) monocrystalline silicon layers that can work as cheap and flexible substrates for both the ... -
Crystalline silicon surface passivation by amorphous silicon carbide films
Vetter, Michael; Martín García, Isidro; Ferré Tomas, Rafel; Garin Escriva, Moises; Alcubilla González, Ramón (2006-10)
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Accés restringit per política de l'editorialThis article reviews the surface passivation of n- and p-type crystalline silicon by hydrogenated amorphous silicon carbide films, which provide surface recombination velocities in the range of 10 cm s-1. Films are deposited ... -
Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition
Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-12)
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Accés restringit per política de l'editorialSurface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been ... -
Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface
Ferré Tomas, Rafel; Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Alcubilla González, Ramón (American Institute of Physics, 2005-11-09)
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Accés restringit per política de l'editorialSurface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer ... -
Emissive properties of SiO2 thin films through photonic windows
Hernández García, David; Garin Escriva, Moises; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Alcubilla González, Ramón (2012-02)
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Accés obert -
Empirical demonstration of CO2 detection using macroporous silicon photonic crystals as selective thermal emitters
Cardador Maza, David; Segura García, Daniel; Deriziotis, Ioannis; Garin Escriva, Moises; Llorca Piqué, Jordi; Rodríguez Martínez, Ángel (2019-09-15)
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Accés obertThis study describes the detection of CO2 using macroporous silicon photonic crystals as thermal emitters. It demonstrates that the reduction of structural nonhomogeneities leads to an improvement of the photonic crystals’ ... -
Enabling silicon-on-silicon photonics with pedestalled Mie resonators
Garin Escriva, Moises; Solà, Magdalena; Julian, Anatole Alexandre; Ortega Villasclaras, Pablo Rafael (2018-07-19)
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Accés obertHigh-refractive-index Mie resonators are regarded as promising building blocks for low-loss all-dielectric nanophotonic applications. To avoid the otherwise excessive damping and loss of symmetry such devices typically ... -
Fixed charge density in dielectrics deposited on c-Si using space charge region dominated lifetime measurements
Garin Escriva, Moises; Martín García, Isidro; Bermejo Broto, Sandra; Alcubilla González, Ramón (American Institute of Physics, 2007-06-29)
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Accés restringit per política de l'editorialDepletion region modulation (DRM) effect is often observed in photoconductance lifetime measurements of crystalline silicon wafers passivated by dielectric films. This effect is closely related to the space-charge region ... -
Highly reflective and passivated ohmic contacts in p-Ge by laser processing of aSiCx:H(i)/Al2O3/aSiC films for thermophotovoltaic applications
Gamel, Mansur Mohammed Ali; López Rodríguez, Gema; Medrano Gómez, Álvaro Manuel; Jiménez Rodríguez, Alba María; Datas Medina, Alejandro; Garin Escriva, Moises; Martín García, Isidro (2024-01-15)
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Accés obertCrystalline germanium (c-Ge) has historically been regarded as a cost-effective alternative to III-V semiconductors for thermophotovoltaic (TPV) device fabrication. However, Ge-based devices have not yet reported high ... -
Hole selective contacts based on transition metal oxides for c-Ge thermophotovoltaic devices
Martín García, Isidro; López Rodríguez, Gema; Garin Escriva, Moises; Ros Costals, Eloi; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim (2023-03-01)
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Accés obertThermophotovoltaics has become a very attractive solution for heat-to-electricity conversion due to its excellent conversion efficiencies. However, further research is needed to reduce the device cost which is typically ... -
Improving selective thermal emission properties of three-dimensional macroporous silicon through porosity tuning
Garin Escriva, Moises; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Alcubilla González, Ramón; Marquier, F.; Arnold, C.; Greffet, J.-J. (American Institute of Physics, 2008-08-27)
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Accés restringit per política de l'editorialWe present a theoretical and experimental study on the effect of progressive porosity increase, through multiple oxidation/oxide removal steps, upon the optical characteristics in threedimensional macroporous silicon. ... -
In situ size sorting in CVD synthesis of Si microspheres
Garin Escriva, Moises; Fenollosa Esteve, Roberto; Kowalski, Lukasz (Macmillan Publishers, 2016-12-08)
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Accés obertSilicon microspheres produced in gas-phase by hot-wall CVD offer unique quality in terms of sphericity, surface smoothness, and size. However, the spheres produced are polydisperse in size, which typically range from 0.5¿µm ... -
Influence of a gold seed in transparent V2Ox/Ag/V2Ox selective contacts for dopant-free silicon solar cells
Nguyen, Hieu Trung; Ros Costals, Eloi; Bertomeu Balaguero, Joan; Asensi López, José Miguel; Andreu Batallé, Jordi; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Garin Escriva, Moises; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Tom, Thomas (2018-11-05)
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Accés obertDielectric/metal/dielectric structures based on vanadium pentoxide with a thin silver interlayer have been optimized to replace traditional transparent electrodes. As would be expected, there is a tradeoff in the metal ... -
Infrared thermal emission in macroporous silicon three-dimensional photonic crystals
Garin Escriva, Moises; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Alcubilla González, Ramón (2007-10)
Article
Accés obertIn this paper we investigate the infrared thermal emission properties of macroporous silicon with modulated pore diameter. Samples with different pore modulation periodicities but fixed in-plane lattice constant are ...