Exploració per autor "Ferré Tomas, Rafel"

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    • Crystalline silicon surface passivation by amorphous silicon carbide films 

      Vetter, Michael; Martín García, Isidro; Ferré Tomas, Rafel; Garin Escriva, Moises; Alcubilla González, Ramón (2006-10)
      Article
      Accés restringit per política de l'editorial
      This article reviews the surface passivation of n- and p-type crystalline silicon by hydrogenated amorphous silicon carbide films, which provide surface recombination velocities in the range of 10 cm s-1. Films are deposited ...

    • Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface 

      Ferré Tomas, Rafel; Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Alcubilla González, Ramón (American Institute of Physics, 2005-11-09)
      Article
      Accés restringit per política de l'editorial
      Surface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer ...

    • Electronic properties of intrinsic and doped amorphous silicon carbide films 

      Vetter, Michael; Voz Sánchez, Cristóbal; Ferré Tomas, Rafel; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Andreu Batallé, Jordi; Alcubilla González, Ramón (2006-07)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated amorphous silicon carbide (a-SiCx : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was ...

    • N-Type emitter surface passivaion in C-Si solar cells by means of antireflective amorphous Silicon Carbide layers 

      Ferré Tomas, Rafel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Vetter, Michael; Torres, I; Alcubilla González, Ramón (American Institute of Physics (AIP), 2006-10)
      Article
      Accés restringit per política de l'editorial
      Emitter saturation current densities (JOe) of phosphorus-diffused planar c-Si solar cell emitters passivated by silicon carbide (SiCx) layers have been determined in a wide sheet resistance range (20–500O/sq). Phosphorus ...

    • n-type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers 

      Ferré Tomas, Rafel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Vetter, Michael; Torres, I.; Alcubilla González, Ramón (American Institute of Physics, 2006-10-05)
      Article
      Accés restringit per política de l'editorial
      Emitter saturation current densities (JOe) of phosphorus-diffused planar c-Si solar cell emitters passivated by silicon carbide (SiCx) layers have been determined in a wide sheet resistance range (20-500 Ω/sp). Phosphorus ...

    • Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide 

      Orpella García, Alberto; Vetter, Michael; Ferré Tomas, Rafel; Martín García, Isidro; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2005-01)
      Article
      Accés restringit per política de l'editorial
      We propose the use of annealed phosphorus doped amorphous silicon carbide layers (a-SiC:H(n)) deposited by PECVD as emitters in solar cells and explore the effect of the annealing time on the emitter saturation current ...