Ara es mostren els items 1-20 de 58

  • 3D TCAD modeling of laser processed c-Si solar cells 

    López González, Juan Miguel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2015)
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    This paper presents an 3D TCAD model of crystalline Silicon (c-Si) solar cells. Physical parameters used in the model are discussed. Simulation results are compared to experimental current-voltage curves and solar cell ...
  • Advances in a baseline process towards high efficiency c-Si solar cell fabrication 

    Alcubilla González, Ramón; Ortega Villasclaras, Pablo Rafael; López, G.; Martín García, Isidro; Bermejo Broto, Sandra; Blanqué, Servane; García Molina, Francisco Miguel; Orpella García, Alberto; Voz Sánchez, Cristóbal (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
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  • Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition 

    Dosev, D K; Puigdollers i González, Joaquim; Orpella García, Alberto; Voz Sánchez, Cristóbal; Fonrodona, Marta; Soler Vilamitjana, David; Marsal, L F; Pallarès Marzal, Josep; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2001-02)
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    The stability under gate bias stress of unpassivated thin film transistors was studied by measuring the transfer and output characteristics at different temperatures. The active layer of these devices consisted of in ...
  • Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes 

    Marsal Garví, Lluís F.; Martín García, Isidro; Pallarés Marzal, Josep; Orpella García, Alberto; Alcubilla González, Ramón (American Institute of Physics, 2003-08-15)
    Article
    Accés restringit per política de l'editorial
    P1-type hydrogenated amorphous silicon–carbon (a-Si12xCx :H) on n-type crystalline silicon (c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal annealing on the electrical ...
  • Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells 

    López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2015-08-28)
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    Abstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as ...
  • Boron diffused emitters passivated with Al2O3 films 

    Masmitja Rusinyol, Gerard; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Calle Martín, Eric; García Molina, Francisco Miguel; Martín García, Isidro; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2013)
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    In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ...
  • Células fotovoltaicas con un rendimiento del 20.5% 

    Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (Grupo Acorde Comunicación (GAC), 2011-03-01)
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    Accés restringit per política de l'editorial
    Un grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial ...
  • Characterization and application of a-SiCx:H films for the passivation of the c-Si surface 

    Martin Campos, Ignacio Clemente; Vetter, M; Orpella García, Alberto; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Marsal, L F; Pallarès Marzal, Josep; Alcubilla González, Ramón (2002-01)
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    Accés restringit per política de l'editorial
    In this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement ...
  • Characterization of bifacial heterojunction Silicon solar cells obtained by Hot-Wire CVD 

    Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Fonrodona, Marta; Garin Escriva, Moises; Orpella García, Alberto; Vetter, Michael; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, F; Bertoeu, J; Andreu Batallé, Jordi (2006-07)
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    Accés restringit per política de l'editorial
    In this work, we study bifacial heterojunction silicon solar cells fabricated by hot-wire CVD on both p- and n-type crystalline silicon substrates. In these devices, hydrogenated microcrystalline silicon doped layers are ...
  • “Cold” process for IBC c-Si solar cells fabrication 

    López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Voz Sánchez, Cristóbal; Orpella García, Alberto; Alcubilla González, Ramón (Elsevier, 2016)
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  • Crystalline silicon solar cells beyond 20% efficiency 

    Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
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    —This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have ...
  • Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition 

    Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-12)
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    Accés restringit per política de l'editorial
    Surface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been ...
  • c-Si solar cells based on laser-processed dielectric films 

    Martín García, Isidro; Colina Brito, Mónica Alejandra; Coll Valentí, Arnau; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (2014-09)
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    Accés restringit per política de l'editorial
    This paper shows an innovative and low temperature fabrication technology for crystalline silicon (c-Si) solar cells where the highly-doped regions are punctually defined through laser processed dielectric films. ...
  • DopLaCell: a new c-Si solar cell based on laser processing of dielectric films 

    Martín García, Isidro; López González, Juan Miguel; Colina Brito, Mónica Alejandra; Orpella García, Alberto; Alcubilla González, Ramón (2013)
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    In this paper we introduce a new crystalline silicon (c-Si) solar cell fabrication technology based on the laser processing of dielectric films to create all the highly-doped regions. We call it DopLaCell (Doped by Laser ...
  • Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Alcubilla González, Ramón (2004-11)
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    Accés restringit per política de l'editorial
    Pentacene thin films obtained by thermal evaporation at room temperature have been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). The dielectric was spin-cast polymethyl methacrylate (PMMA) ...
  • Electronic properties of intrinsic and doped amorphous silicon carbide films 

    Vetter, Michael; Voz Sánchez, Cristóbal; Ferré Tomas, Rafel; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Andreu Batallé, Jordi; Alcubilla González, Ramón (2006-07)
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    Accés restringit per política de l'editorial
    Hydrogenated amorphous silicon carbide (a-SiCx : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was ...
  • Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2002-04)
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    Accés restringit per política de l'editorial
    Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors ...
  • Emitter formation using laser doping technique on n- and p-type c-Si substrates 

    López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Colina Brito, Mónica Alejandra; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2015-05-01)
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    In this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the n ...
  • Experimental determination of base resistance contribution for point-like contacted c-Si solar cells using impedance spectroscopy analysis 

    Orpella García, Alberto; Martín García, Isidro; López González, Juan Miguel; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2015-10)
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    Accés obert
    One of the most common strategies in high-efficiency crystalline silicon (c-Si) solar cells for the rear surface is the combination of a dielectric passivation with a point-like contact to the base. In such devices, the ...
  • Fabrication and characterization of in-situ doped a-Si0.8C0.2 emitter bipolar transistors 

    Orpella García, Alberto; Puigdollers i González, Joaquim; Bardés Llorensí, Daniel; Alcubilla González, Ramón; Marsal, L F; Pallarès Marzal, Josep (2000-09)
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    Accés restringit per política de l'editorial
    Silicon–carbon emitters were deposited by plasma enhanced chemical vapour deposition (PECVD) on a conventional silicon transistor base. The resulting transistors were annealed after the emitter had been deposited which led ...