Ara es mostren els items 1-20 de 86

  • A compact tetrathiafulvalene-benzothiadiazole dyad and its highly symmetrical charge-transfer salt: Ordered donor p-stacks closely bound to their acceptors 

    Geng, Yan; Pfattner, Raphael; Campos García, Antonio; Hauser, Jürg; Laukhin, Vladimir N.; Puigdollers i González, Joaquim; Veciana Miró, Jaume; Mas Torrent, Marta; Rovira Angulo, Concepció; Decurtins, Silvio; Liu, Shixia (2014-06-02)
    Article
    Accés restringit per política de l'editorial
    A compact and planar donor-acceptor molecule 1 comprising tetrathiafulvalene (TTF) and benzothiadiazole (BTD) units has been synthesised and experimentally characterised by structural, optical, and electrochemical methods. ...
  • A critical analysis on the role of back surface passivation for a-Si/c-Si heterojunction solar cells 

    Chatterji, N; Khatavkar, Sanchit; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Puigdollers i González, Joaquim; Mohan Arora, Brij; Antony, Aldrin; Naip, Praadep R (Institute of Electrical and Electronics Engineers (IEEE), 2014)
    Comunicació de congrés
    Accés restringit per política de l'editorial
    Back surface passivation is a well-known method to reduce carrier recombination and hence improves the efficiency of crystalline silicon solar cells. In this manuscript, we critically analyze the role of this process for ...
  • Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition 

    Dosev, D K; Puigdollers i González, Joaquim; Orpella García, Alberto; Voz Sánchez, Cristóbal; Fonrodona, Marta; Soler Vilamitjana, David; Marsal, L F; Pallarès Marzal, Josep; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2001-02)
    Article
    Accés obert
    The stability under gate bias stress of unpassivated thin film transistors was studied by measuring the transfer and output characteristics at different temperatures. The active layer of these devices consisted of in ...
  • Analysis of GaAs-Ti thin films deposited by sputtering onto c-Si and GaAs 

    Silvestre Bergés, Santiago; Puigdollers i González, Joaquim; Boronat, A.; Castañer Muñoz, Luis María (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
    Comunicació de congrés
    Accés obert
    Some sputtering processes of GaAs and Ti onto glass, c-Si and c-GaAs substrates have been carried out in order to obtain thin films as candidates to be intermediate band photovoltaic materials. This work presents first ...
  • Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/ n -Si Schottky diode 

    Mahato, Somnath; Biswas, Debaleen; Gerling Sarabia, Luis Guillermo; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim (2017-08-01)
    Article
    Accés obert
    Electronic properties of Au/V2O5/n-Si Schottky device have been investigated by temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements ranging from 300 K to 150 K. Ideality factor (n) and ...
  • Analysis of the dynamic short-circuit resistance in organic bulk-heterojunction solar cells: relation to the charge carrier collection efficiency 

    Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Asensi López, José Miguel; Galindo Lorente, Sergi; Cheylan, S.; Pacios, R.; Ortega Villasclaras, Pablo Rafael; Alcubilla González, Ramón (2013-06)
    Article
    Accés restringit per política de l'editorial
    This work studies the charge carrier collection efficiency in organic bulk-heterojunction solar cells based on polymer:fullerene blends. An equivalent circuit with a specific recombination term is proposed to describe the ...
  • A rapid, low-cost, and scalable technique for printing state-of-the-art organic field-effcet transistors 

    Temiño, Inés; Del Pozo León, Freddy; Ajayakumar, M.R.; Galindo Lorente, Sergi; Puigdollers i González, Joaquim; Mas Torrent, Marta (2016-06-13)
    Article
    Accés obert
    In the last few years exciting advances have been achieved in developing printing techniques for organic semiconductors, and impressive mobility values have been reported for the resulting organic field-effect transistors ...
  • Back junction n-type silicon heterojunction solar cells with V2O5 hole-selective contact 

    Gerling Sarabia, Luis Guillermo; Masmitjà Rusiñol, Gerard; Voz Sánchez, Cristóbal; Ortega Villasclaras, Pablo Rafael; Puigdollers i González, Joaquim; Alcubilla González, Ramón (Elsevier, 2016)
    Comunicació de congrés
    Accés obert
  • Bifacial heterojunction silicon solar cells by Hot-Wire CVD with open circuit voltage exceeding 600 mV 

    Voz Sánchez, Cristóbal; Muñoz Cervantes, Delfina; Fonrodona, Marta; Martín García, Isidro; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Escarré, Jordi; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2006-07)
    Article
    Accés restringit per política de l'editorial
    Double-sided (bifacial) heterojunction silicon solar cells have been fabricated by Hot-Wire CVD on both p- and n-type crystalline silicon substrates. In these devices, doped microcrystalline silicon layers are combined ...
  • Células fotovoltaicas con un rendimiento del 20.5% 

    Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (Grupo Acorde Comunicación (GAC), 2011-03-01)
    Article
    Accés restringit per política de l'editorial
    Un grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial ...
  • Characterization and application of a-SiCx:H films for the passivation of the c-Si surface 

    Martin Campos, Ignacio Clemente; Vetter, M; Orpella García, Alberto; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Marsal, L F; Pallarès Marzal, Josep; Alcubilla González, Ramón (2002-01)
    Article
    Accés restringit per política de l'editorial
    In this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement ...
  • Characterization and modeling of organic thin-film transistors based pi-conjugated small molecule tetraphenyldibenzoperiflanthene: effects of channel length 

    Boukhili, W.; Mahdouani, M.; Bourguiga, R.; Puigdollers i González, Joaquim (2016-07-01)
    Article
    Accés obert
    P-type organic thin film transistors (OTFTs) with different channel lengths have been fabricated and characterized by thermal evaporation using the small tetraphenyldibenzoperiflanthene (DBP) as an active material on Si/SiO2 ...
  • Characterization of bifacial heterojunction Silicon solar cells obtained by Hot-Wire CVD 

    Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Fonrodona, Marta; Garin Escriva, Moises; Orpella García, Alberto; Vetter, Michael; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, F; Bertoeu, J; Andreu Batallé, Jordi (2006-07)
    Article
    Accés restringit per política de l'editorial
    In this work, we study bifacial heterojunction silicon solar cells fabricated by hot-wire CVD on both p- and n-type crystalline silicon substrates. In these devices, hydrogenated microcrystalline silicon doped layers are ...
  • Characterization of transition metal Oxide/Silicon heterojunctions for solar cell applications 

    Gerling Sarabia, Luis Guillermo; Mahato, Somnath; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Puigdollers i González, Joaquim (2015-10-09)
    Article
    Accés obert
    During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides ...
  • Comparison between the density-of-states of picene transistors measured in air and under vacuum 

    Voz Sánchez, Cristóbal; Marsal, Albert; Moreno Sierra, César; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2012-01)
    Article
    Accés restringit per política de l'editorial
    Picene has recently attracted much attention as the active layer in organic thin-film transistors because of its good performance in air. In this work, we have fabricated picene thin-film transistors that exhibit field-effect ...
  • Comparison of simulation models for Perovskite solar cells 

    Silvestre Bergés, Santiago; Mas-Marza, Elena; Puigdollers i González, Joaquim; Fabregat-Santiago, Francisco; Alfonso, Valero G (WIP Renewable Energies, 2016)
    Text en actes de congrés
    Accés restringit per política de l'editorial
    In this work, a comparison of two models for the simulation of the electrical behavior of perovskite solar cells is presented. The two models considered are the well-known one diode model and an analytical model recently ...
  • Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors 

    Marsal Vinade, Albert; Carreras Seguí, Paz; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Galindo Lorente, Sergi; Alcubilla González, Ramón; Bertomeu Balaguero, Joan; Antony, Aldrin (2014-03-31)
    Article
    Accés restringit per política de l'editorial
    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced ...
  • Copper phthalocyanine thin filma transistors with polymeric gate dielectric 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Fonrodona, Marta; Cheylan, Stephanie; Stella, M; Andreu Batallé, Jordi; Vetter, Michael; Alcubilla González, Ramón (2006-06)
    Article
    Accés restringit per política de l'editorial
    Copper phthalocyanine (CuPc) thin-film transistors have been fabricated using polymethyl methacrylate (PMMA) as gate dielectric. A bottom gate, staggered structure was selected to study the device performance. CuPc thin-films ...
  • Crystalline silicon solar cells beyond 20% efficiency 

    Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
    Text en actes de congrés
    Accés obert
    —This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have ...
  • Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition 

    Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-12)
    Article
    Accés restringit per política de l'editorial
    Surface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been ...