• A compact tetrathiafulvalene-benzothiadiazole dyad and its highly symmetrical charge-transfer salt: Ordered donor p-stacks closely bound to their acceptors 

    Geng, Yan; Pfattner, Raphael; Campos García, Antonio; Hauser, Jürg; Laukhin, Vladimir N.; Puigdollers i González, Joaquim; Veciana Miró, Jaume; Mas Torrent, Marta; Rovira Angulo, Concepció; Decurtins, Silvio; Liu, Shixia (2014-06-02)
    Artículo
    Acceso restringido por política de la editorial
    A compact and planar donor-acceptor molecule 1 comprising tetrathiafulvalene (TTF) and benzothiadiazole (BTD) units has been synthesised and experimentally characterised by structural, optical, and electrochemical methods. ...
  • A critical analysis on the role of back surface passivation for a-Si/c-Si heterojunction solar cells 

    Chatterji, N; Khatavkar, Sanchit; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Puigdollers i González, Joaquim; Mohan Arora, Brij; Antony, Aldrin; Naip, Praadep R (Institute of Electrical and Electronics Engineers (IEEE), 2014)
    Comunicación de congreso
    Acceso restringido por política de la editorial
    Back surface passivation is a well-known method to reduce carrier recombination and hence improves the efficiency of crystalline silicon solar cells. In this manuscript, we critically analyze the role of this process for ...
  • Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition 

    Dosev, D K; Puigdollers i González, Joaquim; Orpella García, Alberto; Voz Sánchez, Cristóbal; Fonrodona, Marta; Soler Vilamitjana, David; Marsal, L F; Pallarès Marzal, Josep; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2001-02)
    Artículo
    Acceso abierto
    The stability under gate bias stress of unpassivated thin film transistors was studied by measuring the transfer and output characteristics at different temperatures. The active layer of these devices consisted of in ...
  • Analysis of GaAs-Ti thin films deposited by sputtering onto c-Si and GaAs 

    Silvestre Bergés, Santiago; Puigdollers i González, Joaquim; Boronat, A.; Castañer Muñoz, Luis María (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
    Comunicación de congreso
    Acceso abierto
    Some sputtering processes of GaAs and Ti onto glass, c-Si and c-GaAs substrates have been carried out in order to obtain thin films as candidates to be intermediate band photovoltaic materials. This work presents first ...
  • Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/ n -Si Schottky diode 

    Mahato, Somnath; Biswas, Debaleen; Gerling Sarabia, Luis Guillermo; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim (2017-08-01)
    Artículo
    Acceso abierto
    Electronic properties of Au/V2O5/n-Si Schottky device have been investigated by temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements ranging from 300 K to 150 K. Ideality factor (n) and ...
  • Analysis of the dynamic short-circuit resistance in organic bulk-heterojunction solar cells: relation to the charge carrier collection efficiency 

    Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Asensi López, José Miguel; Galindo Lorente, Sergi; Cheylan, S.; Pacios, R.; Ortega Villasclaras, Pablo Rafael; Alcubilla González, Ramón (2013-06)
    Artículo
    Acceso restringido por política de la editorial
    This work studies the charge carrier collection efficiency in organic bulk-heterojunction solar cells based on polymer:fullerene blends. An equivalent circuit with a specific recombination term is proposed to describe the ...
  • A rapid, low-cost, and scalable technique for printing state-of-the-art organic field-effcet transistors 

    Temiño, Inés; Del Pozo León, Freddy; Ajayakumar, M.R.; Galindo Lorente, Sergi; Puigdollers i González, Joaquim; Mas Torrent, Marta (2016-06-13)
    Artículo
    Acceso abierto
    In the last few years exciting advances have been achieved in developing printing techniques for organic semiconductors, and impressive mobility values have been reported for the resulting organic field-effect transistors ...
  • Células fotovoltaicas con un rendimiento del 20.5% 

    Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (Grupo Acorde Comunicación (GAC), 2011-03-01)
    Artículo
    Acceso restringido por política de la editorial
    Un grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial ...
  • Characterization and application of a-SiCx:H films for the passivation of the c-Si surface 

    Martin Campos, Ignacio Clemente; Vetter, M; Orpella García, Alberto; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Marsal, L F; Pallarès Marzal, Josep; Alcubilla González, Ramón (2002-01)
    Artículo
    Acceso restringido por política de la editorial
    In this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement ...
  • Characterization and modeling of organic thin-film transistors based pi-conjugated small molecule tetraphenyldibenzoperiflanthene: effects of channel length 

    Boukhili, W.; Mahdouani, M.; Bourguiga, R.; Puigdollers i González, Joaquim (2016-07-01)
    Artículo
    Acceso abierto
    P-type organic thin film transistors (OTFTs) with different channel lengths have been fabricated and characterized by thermal evaporation using the small tetraphenyldibenzoperiflanthene (DBP) as an active material on Si/SiO2 ...
  • Characterization of transition metal Oxide/Silicon heterojunctions for solar cell applications 

    Gerling Sarabia, Luis Guillermo; Mahato, Somnath; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Puigdollers i González, Joaquim (2015-10-09)
    Artículo
    Acceso abierto
    During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides ...
  • Comparison between the density-of-states of picene transistors measured in air and under vacuum 

    Voz Sánchez, Cristóbal; Marsal, Albert; Moreno Sierra, César; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2012-01)
    Artículo
    Acceso restringido por política de la editorial
    Picene has recently attracted much attention as the active layer in organic thin-film transistors because of its good performance in air. In this work, we have fabricated picene thin-film transistors that exhibit field-effect ...
  • Comparison of simulation models for Perovskite solar cells 

    Silvestre Bergés, Santiago; Mas-Marza, Elena; Puigdollers i González, Joaquim; Fabregat-Santiago, Francisco; Alfonso, Valero G (WIP Renewable Energies, 2016)
    Texto en actas de congreso
    Acceso restringido por política de la editorial
    In this work, a comparison of two models for the simulation of the electrical behavior of perovskite solar cells is presented. The two models considered are the well-known one diode model and an analytical model recently ...
  • Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors 

    Marsal Vinade, Albert; Carreras Seguí, Paz; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Galindo Lorente, Sergi; Alcubilla González, Ramón; Bertomeu Balaguero, Joan; Antony, Aldrin (2014-03-31)
    Artículo
    Acceso restringido por política de la editorial
    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced ...
  • Crystalline silicon solar cells beyond 20% efficiency 

    Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
    Texto en actas de congreso
    Acceso abierto
    —This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have ...
  • Degradation study and calculation of density-of-states in PTCDI-C8 channel layer from the electrical characteristics of thin-film transistors 

    Shijeesh, Methattel R.; Vikas, L. S.; Jayaraj, M. K.; Puigdollers i González, Joaquim (American Institute of Physics (AIP), 2014-07-14)
    Artículo
    Acceso restringido por política de la editorial
    N-type organic thin film transistor (OTFT) with a top-contact structure was fabricated by thermal vapour deposition using N,N'-Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) as an n-channel layer on Si/SiO2 substrate. ...
  • Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Alcubilla González, Ramón (2004-11)
    Artículo
    Acceso restringido por política de la editorial
    Pentacene thin films obtained by thermal evaporation at room temperature have been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). The dielectric was spin-cast polymethyl methacrylate (PMMA) ...
  • Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2002-04)
    Artículo
    Acceso restringido por política de la editorial
    Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors ...
  • Ephocell project: smart light collecting system for the efficiency enhancement of solar cells - ray trace modeling of system 

    Aubouy, Laurent; Gutiérrez-Tauste, D.; Della Pirriera, Monica; Noriega, G.; Di Lorenzo, M.L.; Avella, M.; Errico, M.E.; Gentile, G.; Kennedy, M.; Doran, J.; Norton, B.; Ahmed, H.; Baluschev, S.; Bistué Guardiola, J.; Hervera, F.; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Daren, S.; Solomon-Tsvetkov, F.; Pashov, A. (2012)
    Comunicación de congreso
    Acceso restringido por política de la editorial
    PV cell efficiency is limited partly due to the spectral mismatch between the solar spectrum and the PV absorption properties. PV conversion efficiency is enhanced by external modulation of the incident irradiance, by means ...
  • Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor 

    Moreno Sierra, César; Pfattner, Raphael; Mas Torrent, Marta; Puigdollers i González, Joaquim; Bromley, Stephan; Rovira, Concepció; Alcubilla González, Ramón; Veciana, Jaume (2011-11-16)
    Artículo
    Acceso restringido por política de la editorial
    Theoretical and experimental investigations combining in situ Kelvin probe microscopy (KPM) and macroscopic electrical studies are employed to explore the intrinsic transport in dithiophene-tetrathiafulvalene (DT-TTF) ...