Exploració per autor "Calle Martín, Eric"
Ara es mostren els items 1-8 de 8
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2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells
Calle Martín, Eric; Carrió, David; Ortega Villasclaras, Pablo Rafael; von Gastrow, Guillaume; Savin, Hele; Martín García, Isidro; Alcubilla González, Ramón (WIP Renewable Energies, 2016)
Comunicació de congrés
Accés obertBlack silicon (b-Si) reduces drastically light reflectance in the front side of c-Si solar cells to values near zero for the whole absorbed solar spectrum. In this work, we apply 2D and 3D simulations to explore the ... -
3D simulations of interdigitated back-contacted crystalline silicon solar cells on thin substrates
Jin, Chen; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Calle Martín, Eric; Alcubilla González, Ramón (2018-06-01)
Article
Accés obertInterdigitated back contact technology is a promising candidate to be applied to thin crystalline silicon solar cells because of its simpler one-side interconnection while allowing a more flexible front surface treatment. ... -
Boron diffused emitters passivated with Al2O3 films
Masmitjà Rusiñol, Gerard; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Calle Martín, Eric; García Molina, Francisco Miguel; Martín García, Isidro; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2013)
Text en actes de congrés
Accés restringit per política de l'editorialIn this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ... -
Fabricación de células solares de alta eficiencia con estructura LFC-PERC
Calle Martín, Eric (Universitat Politècnica de Catalunya, 2013-07-22)
Projecte Final de Màster Oficial
Accés obert[ANGLÈS] The goal of this project is the fabrication in clean room of high efficiency (beyond 20%) solar cells with PERC-LFC structure. This document describes exhaustively the fabrication process of three batches of devices ... -
Fabricación de un sensor solar de alta precisión en dos ejes para el satélite SeoSat
Calle Martín, Eric (Universitat Politècnica de Catalunya, 2011-09-06)
Projecte/Treball Final de Carrera
Accés obertEnglish: The goal of this project is the fabrication of a two axis sun sensor for the attitude control of the SeoSat satellite. This sensor should detect the position of the sun with high accuracy and at an angle FOV (Field ... -
Fabricación de un sensor solar en dos ejes para el satélite IntaMicroSat
Calle Martín, Eric (Universitat Politècnica de Catalunya, 2011-07-15)
Projecte/Treball Final de Carrera
Accés obertEnglish: he goal of this project is the fabrication of a two axis sun sensor for the attitude control of the IntaMicroSat satellite. This sensor should detect the position of the sun with high accuracy (±1 º) and at an ... -
High efficiency interdigitated back-contact c-Si solar cells
Calle Martín, Eric; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Martín García, Isidro; Carrió Díaz, David; Voz Sánchez, Cristóbal; Orpella García, Alberto; Puigdollers i González, Joaquim; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2015)
Text en actes de congrés
Accés obertIn this work we describe a baseline fabrication process of interdigitated-back-contact c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+ regions at the backside, with ... -
Thin IBC c-Si solar cells based on conventional technologies
Jin, Chen; Martín García, Isidro; Calle Martín, Eric; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Alcubilla González, Ramón (WIP Renewable Energies, 2016)
Text en actes de congrés
Accés restringit per política de l'editorialReducing the wafer thickness for c-Si solar cell fabrication is an effective approach for cost-savings. Interdigitated Back Contacts (IBC) technology is a promising candidate to be applied to thin c-Si substrates due to ...