Now showing items 1-19 of 19

    • A 75 pJ/bit All-Digital Quadrature Coherent IR-UWB Transceiver in 0.18 um CMOS 

      Barajas Ojeda, Enrique; Gómez Salinas, Dídac; Mateo Peña, Diego; González Jiménez, José Luis (2010-05-23)
      Conference report
      Open Access
      In this paper a 75 pJ/b all-digital quadrature coherent impulse radio ultra-wideband transceiver in 0.18 μm CMOS is presented. It consumes 42 mW operating at a 560 Mbps datarate. The receiver and transmitter share most ...
    • A self-calibrating closed loop circuit for configurable constant voltage thermal anemometers 

      Gorreta Mariné, Sergio; Barajas Ojeda, Enrique; Kowalski, Lukasz; Atienza García, María Teresa; Domínguez Pumar, Manuel; Jiménez Serres, Vicente (Institution of Electrical Engineers, 2015-09-17)
      Article
      Open Access
    • A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI 

      Diaz Fortuny, Javier; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Castro López, Rafael; Roca Moreno, Elisenda; Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Mateo Peña, Diego; Fernández Fernández, Francisco V.; Nafría Maqueda, Montserrat (2018-01-01)
      Article
      Open Access
      Statistical characterization of CMOS transistor variability phenomena in modern nanometer technologies is key for accurate end-of-life prediction. This paper presents a novel CMOS transistor array chip to statistically ...
    • Aging in CMOS RF linear power amplifiers: an experimental study 

      Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Crespo Yepes, Albert; Mateo Peña, Diego; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (IEEE Microwave Theory and Techniques Society, 2021-02-01)
      Article
      Restricted access - publisher's policy
      An extensive experimental analysis of the hot carrier injection (HCI) and bias temperature instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article. Two different 2.45-GHz PA topologies ...
    • Aging in CMOS RF linear power amplifiers: experimental comparison and modeling 

      Aragonès Cervera, Xavier; Mateo Peña, Diego; Barajas Ojeda, Enrique; Crespo-Yepes, A.; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2019)
      Conference report
      Restricted access - publisher's policy
      This paper characterizes experimentally the aging degradation experienced by two different 2.45 GHz power amplifier circuits of similar performance, implemented in a 65 nm CMOS technology. Results demonstrate the importance ...
    • Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology 

      Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Porti Pujal, Marc; Nafria, M.; Castro López, Rafael; Roca Moreno, Elisenda; Fernandez, Francisco V. (Institute of Electrical and Electronics Engineers (IEEE), 2018)
      Conference report
      Restricted access - publisher's policy
      Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant ...
    • Behavioural modelling of DLLs for fast simulation and optimisation of jitter and power consumption 

      Barajas Ojeda, Enrique; Mateo Peña, Diego; González Jiménez, José Luis (IEEE Computer Society Publications, 2010)
      Conference report
      Open Access
      This paper presents a behavioural model for fast DLL simulations. The behavioural model includes a modelling of the various noise sources in the DLL that produce output jitter. The model is used to obtain the dependence ...
    • Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations 

      Barajas Ojeda, Enrique; Mateo Peña, Diego; Aragonès Cervera, Xavier; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference report
      Restricted access - publisher's policy
      This paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation ...
    • Differential temperature sensors: Review of applications in the test and characterization of circuits, usage and design methodology 

      Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Altet Sanahujes, Josep (Multidisciplinary Digital Publishing Institute (MDPI), 2019-11-05)
      Article
      Open Access
      Differential temperature sensors can be placed in integrated circuits to extract a signature ofthe power dissipated by the adjacent circuit blocks built in the same silicon die. This review paper firstdiscusses the singularity ...
    • DLL's behavioral modeling for power consumption and jitter fast optimization 

      Barajas Ojeda, Enrique; Mateo Peña, Diego; González Jiménez, José Luis (2010)
      Conference report
      Open Access
      This paper analyzes the sources of jitter in a DLL and presents a behavioral model for fast DLL optimization. An algorithm to simulate the DLL in open loop is demonstrated. This procedure, together with the behavioral ...
    • Fast time-to-market with via-configurable transistor array regular fabric: A delay-locked loop design case study 

      González Colás, Antonio María; Pons Solé, Marc; Barajas Ojeda, Enrique; Mateo Peña, Diego; López González, Juan Miguel; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Abella Ferrer, Jaume; Vera Rivera, Francisco Javier (IEEE Computer Society Publications, 2011)
      Conference lecture
      Restricted access - publisher's policy
      Time-to-market is a critical issue for nowadays integrated circuits manufacturers. In this paper the Via-Configurable Transistor Array regular layout fabric (VCTA), which aims to minimize the time-to-market and its associated ...
    • Impact of adaptive proactive reconfiguration technique on Vmin and lifetime of SRAM caches 

      Pouyan, Peyman; Amat Bertran, Esteve; Barajas Ojeda, Enrique; Rubio Sola, Jose Antonio (2014)
      Conference report
      Open Access
      This work presents a test and measurement technique to monitor aging and process variation status of SRAM cells as an aging-aware design technique. We have then verified our technique with an implemented chip. The obtained ...
    • MOSFET degradation dependence on input signal power in a RF power amplifier 

      Crespo Yepes, Albert; Barajas Ojeda, Enrique; Martin Martínez, Javier; Mateo Peña, Diego; Aragonès Cervera, Xavier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2017-06-25)
      Article
      Open Access
      Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ...
    • MOSFET dynamic thermal sensor for IC testing applications 

      Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Barajas Ojeda, Enrique; León, Javier; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2016-05-01)
      Article
      Open Access
      This paper analyses how a single metal-oxide-semiconductor field-effect transistor (MOSFET) can be employed as a thermal sensor to measure on-chip dynamic thermal signals caused by a power-dissipating circuit under test ...
    • Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging 

      Perpinyà, Xavier; Reverter Cubarsí, Ferran; León, Javier; Barajas Ojeda, Enrique; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2018-01-01)
      Article
      Open Access
      The viability of using off-chip single-shot imaging techniques for local thermal testing in integrated Radio Frequency (RF) power amplifiers (PA’s) is analyzed. With this approach, the frequency response of the output power ...
    • Providing an UWB-IR BAN wireless communications network and its application to design a low power transceiver in CMOS technology 

      Barajas Ojeda, Enrique; Mateo Peña, Diego; González Jiménez, José Luis (Universitat Politècnica de Catalunya, 2010)
      Conference report
      Open Access
      Ultra Wide-Band (UWB) communication techniques have received increasing attention since United States Federal Communications Commission (FCC) adopted a “First Report and Order” in 2002. Unfortunately the regulations that ...
    • Self-calibrating closed-loop circuit for configurable constant voltage thermal anemometers 

      Gorreta Mariné, Sergio; Barajas Ojeda, Enrique; Kowalski, Lukasz; Atienza García, María Teresa; Domínguez Pumar, Manuel; Jiménez Serres, Vicente (Institution of Electrical Engineers, 2015-09-17)
      Article
      Open Access
      A new circuit is described which applies a configurable voltage across an RTD while the current flowing through it is measured with a current mirror. The circuit also allows working with voltages above the IC supply voltage ...
    • Single-MOSFET DC thermal sensor for RF-amplifier central frequency extraction 

      Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Barajas Ojeda, Enrique; León, Javier; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2017-09-01)
      Article
      Open Access
      © 2017 Elsevier B.V. A DC thermal sensor based on a single metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed to extract high-frequency electrical features of embedded circuits. The MOSFET sensor is ...
    • Thermal phase lag heterodyne infrared imaging for current tracking in radio frequency integrated circuits 

      Perpiñà Gilabet, Xavier; León, Javier; Altet Sanahujes, Josep; Vellvehi, Miquel; Reverter Cubarsí, Ferran; Barajas Ojeda, Enrique; Jordà, Xavier (2017-02-27)
      Article
      Open Access
      With thermal phase lag measurements, current paths are tracked in a Class A radio frequency (RF) power amplifier at 2 GHz. The amplifier is heterodynally driven at 440 MHz and 2 GHz, and its resulting thermal field was ...