Exploració per autor "Rana, Manish"
Ara es mostren els items 1-6 de 6
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Analyzing stability concerns in the presence of variations in Subthreshold SRAM
(Universitat Politècnica de Catalunya, 2012-07-02)
Projecte Final de Màster Oficial
Accés obertIn this work, we analyse the stability of the SRAM bitcells when operating in subthreshold supply voltages.We propose a new bit cell with higher stability than 6T Bitcell,that is able to discharge the bit lines in 41% less ... -
REEM: failure/non-failure region estimation method for SRAM yield analysis
(Institute of Electrical and Electronics Engineers (IEEE), 2014)
Text en actes de congrés
Accés restringit per política de l'editorialThe big challenge that we face today for designing resilient memories is the huge number of simulations needed to arrive at a good estimate of memory's yield. A lot of work has come up recently focusing on the reduction ... -
SSFB: a highly-efficient and scalable simulation reduction technique for SRAM yield analysis
(European Interactive Digital Advertising Alliance (EDAA), 2014)
Text en actes de congrés
Accés restringit per política de l'editorialEstimating extremely low SRAM failure-probabilities by conventional Monte Carlo (MC) approach requires hundreds-of-thousands simulations making it an impractical approach. To alleviate this problem, failure-probability ... -
Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation
(2017-03-01)
Article
Accés obertBio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, ... -
Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation
(Institute of Electrical and Electronics Engineers (IEEE), 2016)
Text en actes de congrés
Accés obertBio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, ... -
Statistical analysis and design of subthreshold operation memories
(Universitat Politècnica de Catalunya, 2016-10-18)
Tesi
Accés obertThis thesis presents novel methods based on a combination of well-known statistical techniques for faster estimation of memory yield and their application in the design of energy-efficient subthreshold memories. The emergence ...
