Now showing items 1-20 of 30

  • 3D metallo-dielectric structures combining electrochemical and electroplating techniques 

    Hernández Díaz, David; Lange, D.; Todorov Trifonov, Trifon; Garin Escriva, Moises; García Molina, Francisco Miguel; Rodríguez Martínez, Ángel; Alcubilla González, Ramón (2010-06)
    Article
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    Three-dimensional (3D) periodic nickel micro-structures with a periodicity of 4 μm and high number of structural periods were fabricated by electrodeposition. Macroporous silicon, consisting of periodic arrays of sine-wave ...
  • All-silicon spherical-Mie-resonator photodiode with spectral response in the infrared region 

    Garin Escriva, Moises; Fenollosa Esteve, Roberto; Alcubilla González, Ramón; Shi, Lei; Marsal Garvi, Luis Francisco; Meseguer Rico, Francisco Javier (2014-03-10)
    Article
    Open Access
    Silicon is the material of choice for visible light photodetection and solar cell fabrication. However, due to the intrinsic band gap properties of silicon, most infrared photons are energetically useless. Here, we show ...
  • Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency 

    Savin, Hele; Repo, Päivikki; von Gastrow, Guillaume; Ortega Villasclaras, Pablo Rafael; Calle, Eric; Garin Escriva, Moises; Alcubilla González, Ramón (2015-05-18)
    Article
    Open Access
    The nanostructuring of silicon surfaces—known as black silicon—is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might ...
  • Characterization of a-Si:H/c-Si interfaces by effective-lifetime measurements 

    Garin Escriva, Moises; Rau, U; Bredle, W; Martín García, Isidro; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-11)
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    This article studies theoretically and experimentally the recombination at the amorphous/crystalline silicon interface of a heterojunction with intrinsic thin layer (HIT) structure without metallization. We propose a ...
  • Characterization of bifacial heterojunction Silicon solar cells obtained by Hot-Wire CVD 

    Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Fonrodona, Marta; Garin Escriva, Moises; Orpella García, Alberto; Vetter, Michael; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, F; Bertoeu, J; Andreu Batallé, Jordi (2006-07)
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    In this work, we study bifacial heterojunction silicon solar cells fabricated by hot-wire CVD on both p- and n-type crystalline silicon substrates. In these devices, hydrogenated microcrystalline silicon doped layers are ...
  • Controlling Plateau-Rayleigh instabilities during the reorganization of silicon macropores in the Silicon Millefeuille process 

    Garin Escriva, Moises; Jin, Chen; Cardador Maza, David; Trifonov, T.; Alcubilla González, Ramón (Macmillan Publishers, 2017-08-03)
    Article
    Open Access
    The reorganization through high-temperature annealing of closely-packed pore arrays can be exploited to create ultra-thin (<20 µm) monocrystalline silicon layers that can work as cheap and flexible substrates for both the ...
  • Crystalline silicon surface passivation by amorphous silicon carbide films 

    Vetter, Michael; Martín García, Isidro; Ferré Tomas, Rafel; Garin Escriva, Moises; Alcubilla González, Ramón (2006-10)
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    This article reviews the surface passivation of n- and p-type crystalline silicon by hydrogenated amorphous silicon carbide films, which provide surface recombination velocities in the range of 10 cm s-1. Films are deposited ...
  • Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition 

    Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-12)
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    Surface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been ...
  • Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface 

    Ferré Tomas, Rafel; Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Alcubilla González, Ramón (American Institute of Physics, 2005-11-09)
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    Surface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer ...
  • Emissive properties of SiO2 thin films through photonic windows 

    Hernández García, David; Garin Escriva, Moises; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Alcubilla González, Ramón (2012-02)
    Article
    Open Access
  • Enabling silicon-on-silicon photonics with pedestalled Mie resonators 

    Garin Escriva, Moises; Solà, Magdalena; Julian, Anatole Alexandre; Ortega Villasclaras, Pablo Rafael (2018-07-19)
    Article
    Open Access
    High-refractive-index Mie resonators are regarded as promising building blocks for low-loss all-dielectric nanophotonic applications. To avoid the otherwise excessive damping and loss of symmetry such devices typically ...
  • Fixed charge density in dielectrics deposited on c-Si using space charge region dominated lifetime measurements 

    Garin Escriva, Moises; Martín García, Isidro; Bermejo Broto, Sandra; Alcubilla González, Ramón (American Institute of Physics, 2007-06-29)
    Article
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    Depletion region modulation (DRM) effect is often observed in photoconductance lifetime measurements of crystalline silicon wafers passivated by dielectric films. This effect is closely related to the space-charge region ...
  • Improving selective thermal emission properties of three-dimensional macroporous silicon through porosity tuning 

    Garin Escriva, Moises; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Alcubilla González, Ramón; Marquier, F.; Arnold, C.; Greffet, J.-J. (American Institute of Physics, 2008-08-27)
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    We present a theoretical and experimental study on the effect of progressive porosity increase, through multiple oxidation/oxide removal steps, upon the optical characteristics in threedimensional macroporous silicon. ...
  • Influence of a gold seed in transparent V2Ox/Ag/V2Ox selective contacts for dopant-free silicon solar cells 

    Nguyen, Hieu Trung; Ros Costals, Eloi; Bertomeu Balaguero, Joan; Asensi López, José Miguel; Andreu Batallé, Jordi; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Garin Escriva, Moises; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Tom, Thomas (2018-11-05)
    Article
    Open Access
    Dielectric/metal/dielectric structures based on vanadium pentoxide with a thin silver interlayer have been optimized to replace traditional transparent electrodes. As would be expected, there is a tradeoff in the metal ...
  • Infrared thermal emission in macroporous silicon three-dimensional photonic crystals 

    Garin Escriva, Moises; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Alcubilla González, Ramón (2007-10)
    Article
    Open Access
    In this paper we investigate the infrared thermal emission properties of macroporous silicon with modulated pore diameter. Samples with different pore modulation periodicities but fixed in-plane lattice constant are ...
  • Infrared thermal emission inmacroporous silicon three-dimensional photonics crystals 

    Garin Escriva, Moises; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Alcubilla González, Ramón (American Institute of Physics, 2007-07-30)
    Article
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    In this paper we investigate the infrared thermal emission properties of macroporous silicon with modulated pore diameter. Samples with different pore modulation periodicities but fixed in-plane lattice constant are ...
  • In situ size sorting in CVD synthesis of Si microspheres 

    Garin Escriva, Moises; Fenollosa Esteve, Roberto; Kowalski, Lukasz (Macmillan Publishers, 2016-12-08)
    Article
    Open Access
    Silicon microspheres produced in gas-phase by hot-wall CVD offer unique quality in terms of sphericity, surface smoothness, and size. However, the spheres produced are polydisperse in size, which typically range from 0.5¿µm ...
  • Light harvesting by a spherical silicon microcavity 

    Garin Escriva, Moises; Fenollosa Esteve, Roberto; Ortega Villasclaras, Pablo Rafael; Meseguer Rico, Francisco Javier (American Institute of Physics (AIP), 2016)
    Article
    Open Access
    Silicon colloids are presented as efficient absorbers in the VIS-NIR region. The theory of resonant absorption by Mie modes in a single high-index sphere is reviewed and engineering rules established. The presented model ...
  • Optical properties of 3D macroporous silicon structures 

    Garin Escriva, Moises; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Marsal Garví, Lluís Francesc; Alcubilla González, Ramón (2008-04-15)
    Article
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    We study the optical properties of three-dimensional (3D) microstructures fabricated by electrochemical etching of macroporous silicon with modulated pore diameter. Optical measurements along the pore axis reveal photonic ...
  • Silicon microcavity-based photovoltaic cells for IR harvesting 

    Garin Escriva, Moises; Fenollosa Esteve, Roberto; Alcubilla González, Ramón; Shi, Lei; Marsal Garví, Lluis; Meseguer Rico, Francisco Javier (2014-05-22)
    Article
    Open Access
    Photovoltaic cells on silicon spherical microcavities trap IR light, increasing the probability of photon absorption and enhancing the efficiency of solar energy devices.