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Browsing by Author "Garin Escriva, Moises"
Now showing items 1-20 of 39
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3D metallo-dielectric structures combining electrochemical and electroplating techniques
(2010-06)
Article
Restricted access - publisher's policyThree-dimensional (3D) periodic nickel micro-structures with a periodicity of 4 μm and high number of structural periods were fabricated by electrodeposition. Macroporous silicon, consisting of periodic arrays of sine-wave ... -
All-silicon spherical-Mie-resonator photodiode with spectral response in the infrared region
(2014-03-10)
Article
Open AccessSilicon is the material of choice for visible light photodetection and solar cell fabrication. However, due to the intrinsic band gap properties of silicon, most infrared photons are energetically useless. Here, we show ... -
Annealed phosphorous-doped amorphous silicon as electron selective contact for crystalline germanium thermophotovoltaic cells
(2025)
Conference lecture
Restricted access - publisher's policyThermophotovoltaic devices based on crystalline germanium (c-Ge) substrates that avoid the epitaxial growth of III-V compounds are a promising solution for reducing technological costs of such technology. Heterojunction ... -
Bifacial thermophotovoltaics: Design and modeling of c-Ge devices
(2025-08-15)
Article
Open AccessThermophotovoltaic devices are among the most efficient technologies to convert heat into electricity by means of IR photons emitted from a hot body. Recently, bifacial thermophotovoltaic devices which receive photons on ... -
Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency
(2015-05-18)
Article
Open AccessThe nanostructuring of silicon surfaces—known as black silicon—is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might ... -
Black ultra-thin crystalline silicon wafers reach the 4n2 absorption limit–application to IBC solar cells
(2023-09-27)
Article
Open AccessCutting costs by progressively decreasing substrate thickness is a common theme in the crystalline silicon photovoltaic industry for the last decades, since drastically thinner wafers would significantly reduce the ... -
Characterization of a-Si:H/c-Si interfaces by effective-lifetime measurements
(American Institute of Physics (AIP), 2005-11)
Article
Restricted access - publisher's policyThis article studies theoretically and experimentally the recombination at the amorphous/crystalline silicon interface of a heterojunction with intrinsic thin layer (HIT) structure without metallization. We propose a ... -
Characterization of bifacial heterojunction Silicon solar cells obtained by Hot-Wire CVD
(2006-07)
Article
Restricted access - publisher's policyIn this work, we study bifacial heterojunction silicon solar cells fabricated by hot-wire CVD on both p- and n-type crystalline silicon substrates. In these devices, hydrogenated microcrystalline silicon doped layers are ... -
Controlling Plateau-Rayleigh instabilities during the reorganization of silicon macropores in the Silicon Millefeuille process
(Macmillan Publishers, 2017-08-03)
Article
Open AccessThe reorganization through high-temperature annealing of closely-packed pore arrays can be exploited to create ultra-thin (<20 µm) monocrystalline silicon layers that can work as cheap and flexible substrates for both the ... -
Crystalline silicon surface passivation by amorphous silicon carbide films
(2006-10)
Article
Restricted access - publisher's policyThis article reviews the surface passivation of n- and p-type crystalline silicon by hydrogenated amorphous silicon carbide films, which provide surface recombination velocities in the range of 10 cm s-1. Films are deposited ... -
Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition
(American Institute of Physics (AIP), 2005-12)
Article
Restricted access - publisher's policySurface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been ... -
Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface
(American Institute of Physics, 2005-11-09)
Article
Restricted access - publisher's policySurface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer ... -
Emissive properties of SiO2 thin films through photonic windows
(2012-02)
Article
Open Access -
Empirical demonstration of CO2 detection using macroporous silicon photonic crystals as selective thermal emitters
(2019-09-15)
Article
Open AccessThis study describes the detection of CO2 using macroporous silicon photonic crystals as thermal emitters. It demonstrates that the reduction of structural nonhomogeneities leads to an improvement of the photonic crystals’ ... -
Enabling silicon-on-silicon photonics with pedestalled Mie resonators
(2018-07-19)
Article
Open AccessHigh-refractive-index Mie resonators are regarded as promising building blocks for low-loss all-dielectric nanophotonic applications. To avoid the otherwise excessive damping and loss of symmetry such devices typically ... -
Epitaxially grown crystalline silicon as electron selective contact layer for crystalline germanium TPV cells
(2023)
Conference lecture
Restricted access - publisher's policyCrystalline germanium has been proposed as a cost-effective absorber for the fabrication of thermophotovoltaic (TPV) cells which require, among other technologies, the development of electron-selective contacts. In this ... -
Fixed charge density in dielectrics deposited on c-Si using space charge region dominated lifetime measurements
(American Institute of Physics, 2007-06-29)
Article
Restricted access - publisher's policyDepletion region modulation (DRM) effect is often observed in photoconductance lifetime measurements of crystalline silicon wafers passivated by dielectric films. This effect is closely related to the space-charge region ... -
Highly reflective and passivated ohmic contacts in p-Ge by laser processing of aSiCx:H(i)/Al2O3/aSiC films for thermophotovoltaic applications
(2024-01-15)
Article
Open AccessCrystalline germanium (c-Ge) has historically been regarded as a cost-effective alternative to III-V semiconductors for thermophotovoltaic (TPV) device fabrication. However, Ge-based devices have not yet reported high ... -
Hole selective contacts based on transition metal oxides for c-Ge thermophotovoltaic devices
(2023-03-01)
Article
Open AccessThermophotovoltaics has become a very attractive solution for heat-to-electricity conversion due to its excellent conversion efficiencies. However, further research is needed to reduce the device cost which is typically ... -
Improving selective thermal emission properties of three-dimensional macroporous silicon through porosity tuning
(American Institute of Physics, 2008-08-27)
Article
Restricted access - publisher's policyWe present a theoretical and experimental study on the effect of progressive porosity increase, through multiple oxidation/oxide removal steps, upon the optical characteristics in threedimensional macroporous silicon. ...
