Now showing items 1-9 of 9

  • A compact charge ratio expression for the emitter delay of polysilicon emitter bipolar transistors 

    Castañer Muñoz, Luis María; Sureda, S; Bardés Llorensí, Daniel; Alcubilla González, Ramón (1994-03)
    Article
    Open Access
    A compact solution for the ratio of the excess minority carrier charge stored into the polysilicon to the charge stored in the single crystal part of the emitter of a polysilicon emitter bipolar transistor is derived. The ...
  • Analysis of conduction mechanisms in annealed n-Si1-xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations 

    Marsal, L F; Pallares, J; Correig, X; Orpella García, Alberto; Bardés Llorensí, Daniel; Alcubilla González, Ramón (American Institute of Physics (AIP), 1999-01)
    Article
    Restricted access - publisher's policy
    We fabricated and characterized annealed n-type amorphous Si1-xCx on p-type crystalline silicon heterojunction diodes with three different base doping concentrations: NA~1016,¿1018, and 1020¿cm-3. The conduction mechanisms ...
  • Analytical modelling of bjt neurtral base region under variable injection conditions 

    Bardés Llorensí, Daniel; Alcubilla González, Ramón (1997-08)
    Article
    Restricted access - publisher's policy
    We present a set of closed form analytical solutions of the transport equation in the base of bipolar transistors. The presented 1D solutions hold for variable injection conditions, arbitrary doping profiles and arbitrary ...
  • Converses sobre disseny digital: dubtes a l'hora de fer una simulació 

    Altet Sanahujes, Josep; Rubio Sola, Jose Antonio; Bardés Llorensí, Daniel; Calderer Cardona, Josep; Pons Nin, Joan; Mateo Peña, Diego; Martín, Isidro (Departament d'Enginyeria Electrònica, 2016-10-25)
    Audiovisual
    Open Access
  • Diseño digital : una perspectiva VLSI-CMOS 

    Alcubilla González, Ramón; Pons Nin, Joan; Bardés Llorensí, Daniel (Edicions UPC, 1996)
    Book
    Restricted access to the UPC academic community
    El presente texto aporta el material necesario para un curso introductorio de Electrónica Digital. Incluye los conceptos fundamentales de diseño clásico de circuitos lógicos combinacionales y secuenciales. Adicionalmente ...
  • Electrical properties of PECVD amorphous silicon-carbon alloys from amorphous-crystalline heterojunctions 

    Marsal Amenós, Félix; Pallarés Viña, Miguel Juan; Correig Blanchar, Francesc Xavier; Domínguez Pumar, Manuel; Bardés Llorensí, Daniel; Calderer Cardona, Josep; Alcubilla González, Ramón (1997-08)
    Article
    Restricted access - publisher's policy
    Heterojunction diodes fabricated by plasma enhanced chemical vapour deposition of n-type amorphous silicon carbide on p-type crystalline silicon are analysed by measuring their current-voltage characteristics. Two carrier ...
  • Fabrication and characterization of in-situ doped a-Si0.8C0.2 emitter bipolar transistors 

    Orpella García, Alberto; Puigdollers i González, Joaquim; Bardés Llorensí, Daniel; Alcubilla González, Ramón; Marsal, L F; Pallarès Marzal, Josep (2000-09)
    Article
    Restricted access - publisher's policy
    Silicon–carbon emitters were deposited by plasma enhanced chemical vapour deposition (PECVD) on a conventional silicon transistor base. The resulting transistors were annealed after the emitter had been deposited which led ...
  • Fundamentos de diseño microelectrónico 

    Castañer Muñoz, Luis María; Jiménez Serres, Vicente; Bardés Llorensí, Daniel (Edicions UPC, 2002)
    Book
    Restricted access to UB, UAB, UPC, UPF, UdG, UdL, URV, UOC, BC, UVic, UJI, URL, UIC users
    El presente texto aporta el material necesario para un curso introductorio de diseño microelectrónico. Este libro está concebido como una herramienta de autoaprendizaje y, por ello, en cada capítulo se proponen numerosos ...
  • In-situ doped amorphous Si0.8C0.2 emitter bipolar transistors 

    Orpella García, Alberto; Bardés Llorensí, Daniel; Alcubilla González, Ramón; Marsal, L F; Pallarès Marzal, Josep (1999-11)
    Article
    Open Access
    The fabrication and characterization of in situ-doped amorphous Si/sub 0.8/C/sub 0.2/ emitter transistors are presented. Emitter Gummel numbers exceeding 10/sup 14/ s/cm/sup 4/ are reported for the first time in this type ...