Browsing by Author "Martín García, Isidro"
Now showing items 1-20 of 121
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2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells
(WIP Renewable Energies, 2016)
Conference lecture
Open AccessBlack silicon (b-Si) reduces drastically light reflectance in the front side of c-Si solar cells to values near zero for the whole absorbed solar spectrum. In this work, we apply 2D and 3D simulations to explore the ... -
3D simulations of back-contact back-junction c-Si(P) solar cells with doped point contacts
(2013)
Conference report
Restricted access - publisher's policyThe back-contact back-junction BC-BJ solar cell concept is a promising photovoltaic structure for both laboratory and industrial c-Si solar cells. High efficiency devices based on this concept have been reported in the ... -
3D simulations of interdigitated back-contacted crystalline silicon solar cells on thin substrates
(2018-06-01)
Article
Open AccessInterdigitated back contact technology is a promising candidate to be applied to thin crystalline silicon solar cells because of its simpler one-side interconnection while allowing a more flexible front surface treatment. ... -
3D TCAD modeling of laser processed c-Si solar cells
(Institute of Electrical and Electronics Engineers (IEEE), 2015)
Conference report
Restricted access - publisher's policyThis paper presents an 3D TCAD model of crystalline Silicon (c-Si) solar cells. Physical parameters used in the model are discussed. Simulation results are compared to experimental current-voltage curves and solar cell ... -
Accelerating hydrogen sensing with Pd-Mos capacitors using active controls of trapped charge
(Elsevier, 2024-11)
Article
Open AccessHydrogen monitoring with reliable, fast and cheap sensors is crucial to fully exploit the potential of this gas as an energy vector. One of the most appealing technologies for hydrogen sensing is based on MOS capacitors ... -
Advances in a baseline process towards high efficiency c-Si solar cell fabrication
(IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
Conference report
Open Access -
An IBC solar cell for the UPC CubeSat-1 mission
(Institute of Electrical and Electronics Engineers (IEEE), 2013)
Conference report
Restricted access - publisher's policyIn this work the fabrication and electrical characterization of interdigitated back contact IBC solar cells is shown. These solar cells have been specifically designed for a CubeSat based satellite under developement at ... -
Annealed phosphorous-doped amorphous silicon as electron selective contact for crystalline germanium thermophotovoltaic cells
(2025)
Conference lecture
Restricted access - publisher's policyThermophotovoltaic devices based on crystalline germanium (c-Ge) substrates that avoid the epitaxial growth of III-V compounds are a promising solution for reducing technological costs of such technology. Heterojunction ... -
Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes
(American Institute of Physics, 2003-08-15)
Article
Restricted access - publisher's policyP1-type hydrogenated amorphous silicon–carbon (a-Si12xCx :H) on n-type crystalline silicon (c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal annealing on the electrical ... -
Application of quasi-steady-state photoconductance technique to lifetime measurements on crystalline germanium substrates
(2020-07-01)
Article
Open AccessSimilar to other high quality crystalline absorbers, an accurate knowledge of surface passivation of crystalline germanium (c-Ge) substrates is crucial for a straightforward improvement of photovoltaic device performance. ... -
Atomic layer deposition of vanadium oxide films for crystalline silicon solar cells
(Royal Society of Chemistry (RSC), 2022)
Article
Open AccessTransition metal oxides (TMOs) are promising materials to develop selective contacts on high-efficiency crystalline silicon solar cells. Nevertheless, the standard deposition technique used for TMOs is thermal evaporation, ... -
Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells
(2015-08-28)
Article
Open AccessAbstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as ... -
Bifacial heterojunction silicon solar cells by Hot-Wire CVD with open circuit voltage exceeding 600 mV
(2006-07)
Article
Restricted access - publisher's policyDouble-sided (bifacial) heterojunction silicon solar cells have been fabricated by Hot-Wire CVD on both p- and n-type crystalline silicon substrates. In these devices, doped microcrystalline silicon layers are combined ... -
Black ultra-thin crystalline silicon wafers reach the 4n2 absorption limit–application to IBC solar cells
(2023-09-27)
Article
Open AccessCutting costs by progressively decreasing substrate thickness is a common theme in the crystalline silicon photovoltaic industry for the last decades, since drastically thinner wafers would significantly reduce the ... -
Boron diffused emitters passivated with Al2O3 films
(Institute of Electrical and Electronics Engineers (IEEE), 2013)
Conference report
Restricted access - publisher's policyIn this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ... -
c-Si solar cells based on laser-processed dielectric films
(2014-09)
Article
Restricted access - publisher's policyThis paper shows an innovative and low temperature fabrication technology for crystalline silicon (c-Si) solar cells where the highly-doped regions are punctually defined through laser processed dielectric films. ... -
Células fotovoltaicas con un rendimiento del 20.5%
(Grupo Acorde Comunicación (GAC), 2011-03-01)
Article
Restricted access - publisher's policyUn grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial ... -
Characterization of a-Si:H/c-Si interfaces by effective-lifetime measurements
(American Institute of Physics (AIP), 2005-11)
Article
Restricted access - publisher's policyThis article studies theoretically and experimentally the recombination at the amorphous/crystalline silicon interface of a heterojunction with intrinsic thin layer (HIT) structure without metallization. We propose a ... -
Charge trapping control in MOS capacitors
(Institute of Electrical and Electronics Engineers (IEEE), 2016-12-26)
Article
Open AccessThis paper presents an active control of C-V characteristic for MOS capacitors based on Sliding Mode control and sigma-delta-modulation. The capacitance of the device at a certain voltage is measured periodically and ... -
“Cold” process for IBC c-Si solar cells fabrication
(Elsevier, 2016)
Conference lecture
Open Access
