Now showing items 1-20 of 107

    • 2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells 

      Calle Martín, Eric; Carrió, David; Ortega Villasclaras, Pablo Rafael; von Gastrow, Guillaume; Savin, Hele; Martín García, Isidro; Alcubilla González, Ramón (WIP Renewable Energies, 2016)
      Conference lecture
      Open Access
      Black silicon (b-Si) reduces drastically light reflectance in the front side of c-Si solar cells to values near zero for the whole absorbed solar spectrum. In this work, we apply 2D and 3D simulations to explore the ...
    • 3D simulations of back-contact back-junction c-Si(P) solar cells with doped point contacts 

      Carrió Díaz, David; Ortega Villasclaras, Pablo Rafael; López, Gema; López González, Juan Miguel; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2013)
      Conference report
      Restricted access - publisher's policy
      The back-contact back-junction BC-BJ solar cell concept is a promising photovoltaic structure for both laboratory and industrial c-Si solar cells. High efficiency devices based on this concept have been reported in the ...
    • 3D simulations of interdigitated back-contacted crystalline silicon solar cells on thin substrates 

      Jin, Chen; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Calle Martín, Eric; Alcubilla González, Ramón (2018-06-01)
      Article
      Open Access
      Interdigitated back contact technology is a promising candidate to be applied to thin crystalline silicon solar cells because of its simpler one-side interconnection while allowing a more flexible front surface treatment. ...
    • 3D TCAD modeling of laser processed c-Si solar cells 

      López González, Juan Miguel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2015)
      Conference report
      Restricted access - publisher's policy
      This paper presents an 3D TCAD model of crystalline Silicon (c-Si) solar cells. Physical parameters used in the model are discussed. Simulation results are compared to experimental current-voltage curves and solar cell ...
    • Advances in a baseline process towards high efficiency c-Si solar cell fabrication 

      Alcubilla González, Ramón; Ortega Villasclaras, Pablo Rafael; López, G.; Martín García, Isidro; Bermejo Broto, Sandra; Blanqué, Servane; García Molina, Francisco Miguel; Orpella García, Alberto; Voz Sánchez, Cristóbal (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
      Conference report
      Open Access
    • An IBC solar cell for the UPC CubeSat-1 mission 

      Ortega Villasclaras, Pablo Rafael; Jové Casulleras, Roger; Pedret, A; Gonzalvez, G.; López Rodríguez, Gema; Martín García, Isidro; Domínguez Pumar, Manuel; Alcubilla González, Ramón; Camps Carmona, Adriano José (Institute of Electrical and Electronics Engineers (IEEE), 2013)
      Conference report
      Restricted access - publisher's policy
      In this work the fabrication and electrical characterization of interdigitated back contact IBC solar cells is shown. These solar cells have been specifically designed for a CubeSat based satellite under developement at ...
    • Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes 

      Marsal Garví, Lluís F.; Martín García, Isidro; Pallarés Marzal, Josep; Orpella García, Alberto; Alcubilla González, Ramón (American Institute of Physics, 2003-08-15)
      Article
      Restricted access - publisher's policy
      P1-type hydrogenated amorphous silicon–carbon (a-Si12xCx :H) on n-type crystalline silicon (c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal annealing on the electrical ...
    • Application of quasi-steady-state photoconductance technique to lifetime measurements on crystalline germanium substrates 

      Martín García, Isidro; Alcañiz, A.; Jiménez Pagán, Alba; López Rodríguez, Gema; del Cañizo Nadal, Carlos; Datas Medina, Alejandro (2020-07-01)
      Article
      Open Access
      Similar to other high quality crystalline absorbers, an accurate knowledge of surface passivation of crystalline germanium (c-Ge) substrates is crucial for a straightforward improvement of photovoltaic device performance. ...
    • Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells 

      López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2015-08-28)
      Article
      Open Access
      Abstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as ...
    • Bifacial heterojunction silicon solar cells by Hot-Wire CVD with open circuit voltage exceeding 600 mV 

      Voz Sánchez, Cristóbal; Muñoz Cervantes, Delfina; Fonrodona, Marta; Martín García, Isidro; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Escarré, Jordi; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2006-07)
      Article
      Restricted access - publisher's policy
      Double-sided (bifacial) heterojunction silicon solar cells have been fabricated by Hot-Wire CVD on both p- and n-type crystalline silicon substrates. In these devices, doped microcrystalline silicon layers are combined ...
    • Boron diffused emitters passivated with Al2O3 films 

      Masmitjà Rusiñol, Gerard; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Calle Martín, Eric; García Molina, Francisco Miguel; Martín García, Isidro; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2013)
      Conference report
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      In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ...
    • c-Si solar cells based on laser-processed dielectric films 

      Martín García, Isidro; Colina Brito, Mónica Alejandra; Coll Valentí, Arnau; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (2014-09)
      Article
      Restricted access - publisher's policy
      This paper shows an innovative and low temperature fabrication technology for crystalline silicon (c-Si) solar cells where the highly-doped regions are punctually defined through laser processed dielectric films. ...
    • Células fotovoltaicas con un rendimiento del 20.5% 

      Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (Grupo Acorde Comunicación (GAC), 2011-03-01)
      Article
      Restricted access - publisher's policy
      Un grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial ...
    • Characterization of a-Si:H/c-Si interfaces by effective-lifetime measurements 

      Garin Escriva, Moises; Rau, U; Bredle, W; Martín García, Isidro; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-11)
      Article
      Restricted access - publisher's policy
      This article studies theoretically and experimentally the recombination at the amorphous/crystalline silicon interface of a heterojunction with intrinsic thin layer (HIT) structure without metallization. We propose a ...
    • Charge trapping control in MOS capacitors 

      Domínguez Pumar, Manuel; Bheesayagari, Chenna Reddy; Gorreta Mariné, Sergio; López Rodríguez, Gema; Martín García, Isidro; Blokhina, Elena; Pons Nin, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2016-12-26)
      Article
      Open Access
      This paper presents an active control of C-V characteristic for MOS capacitors based on Sliding Mode control and sigma-delta-modulation. The capacitance of the device at a certain voltage is measured periodically and ...
    • “Cold” process for IBC c-Si solar cells fabrication 

      López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Voz Sánchez, Cristóbal; Orpella García, Alberto; Alcubilla González, Ramón (Elsevier, 2016)
      Conference lecture
      Open Access
    • Crystalline silicon solar cells beyond 20% efficiency 

      Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
      Conference report
      Open Access
      —This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have ...
    • Crystalline silicon surface passivation by amorphous silicon carbide films 

      Vetter, Michael; Martín García, Isidro; Ferré Tomas, Rafel; Garin Escriva, Moises; Alcubilla González, Ramón (2006-10)
      Article
      Restricted access - publisher's policy
      This article reviews the surface passivation of n- and p-type crystalline silicon by hydrogenated amorphous silicon carbide films, which provide surface recombination velocities in the range of 10 cm s-1. Films are deposited ...
    • Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition 

      Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-12)
      Article
      Restricted access - publisher's policy
      Surface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been ...
    • Development of LASER fired contacts on silicon heterojunction solar cells for the application to rear contact structures 

      Muñoz Cervantes, Delfina; Desrues, T.; Ribeyron, P.J.; Orpella García, Alberto; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2010-04)
      Article
      Restricted access - publisher's policy
      In this work, we present our progress in contacting both doped and undoped a-Si:H layers using a LASER tool and show some applications for three different HJ solar cell designs: standard (p-type), rear emitter (n-type) and ...