Browsing by Author "Martín García, Isidro"
Now showing items 1-20 of 107
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2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells
(WIP Renewable Energies, 2016)
Conference lecture
Open AccessBlack silicon (b-Si) reduces drastically light reflectance in the front side of c-Si solar cells to values near zero for the whole absorbed solar spectrum. In this work, we apply 2D and 3D simulations to explore the ... -
3D simulations of back-contact back-junction c-Si(P) solar cells with doped point contacts
(2013)
Conference report
Restricted access - publisher's policyThe back-contact back-junction BC-BJ solar cell concept is a promising photovoltaic structure for both laboratory and industrial c-Si solar cells. High efficiency devices based on this concept have been reported in the ... -
3D simulations of interdigitated back-contacted crystalline silicon solar cells on thin substrates
(2018-06-01)
Article
Open AccessInterdigitated back contact technology is a promising candidate to be applied to thin crystalline silicon solar cells because of its simpler one-side interconnection while allowing a more flexible front surface treatment. ... -
3D TCAD modeling of laser processed c-Si solar cells
(Institute of Electrical and Electronics Engineers (IEEE), 2015)
Conference report
Restricted access - publisher's policyThis paper presents an 3D TCAD model of crystalline Silicon (c-Si) solar cells. Physical parameters used in the model are discussed. Simulation results are compared to experimental current-voltage curves and solar cell ... -
Advances in a baseline process towards high efficiency c-Si solar cell fabrication
(IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
Conference report
Open Access -
An IBC solar cell for the UPC CubeSat-1 mission
(Institute of Electrical and Electronics Engineers (IEEE), 2013)
Conference report
Restricted access - publisher's policyIn this work the fabrication and electrical characterization of interdigitated back contact IBC solar cells is shown. These solar cells have been specifically designed for a CubeSat based satellite under developement at ... -
Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes
(American Institute of Physics, 2003-08-15)
Article
Restricted access - publisher's policyP1-type hydrogenated amorphous silicon–carbon (a-Si12xCx :H) on n-type crystalline silicon (c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal annealing on the electrical ... -
Application of quasi-steady-state photoconductance technique to lifetime measurements on crystalline germanium substrates
(2020-07-01)
Article
Open AccessSimilar to other high quality crystalline absorbers, an accurate knowledge of surface passivation of crystalline germanium (c-Ge) substrates is crucial for a straightforward improvement of photovoltaic device performance. ... -
Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells
(2015-08-28)
Article
Open AccessAbstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as ... -
Bifacial heterojunction silicon solar cells by Hot-Wire CVD with open circuit voltage exceeding 600 mV
(2006-07)
Article
Restricted access - publisher's policyDouble-sided (bifacial) heterojunction silicon solar cells have been fabricated by Hot-Wire CVD on both p- and n-type crystalline silicon substrates. In these devices, doped microcrystalline silicon layers are combined ... -
Boron diffused emitters passivated with Al2O3 films
(Institute of Electrical and Electronics Engineers (IEEE), 2013)
Conference report
Restricted access - publisher's policyIn this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ... -
c-Si solar cells based on laser-processed dielectric films
(2014-09)
Article
Restricted access - publisher's policyThis paper shows an innovative and low temperature fabrication technology for crystalline silicon (c-Si) solar cells where the highly-doped regions are punctually defined through laser processed dielectric films. ... -
Células fotovoltaicas con un rendimiento del 20.5%
(Grupo Acorde Comunicación (GAC), 2011-03-01)
Article
Restricted access - publisher's policyUn grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial ... -
Characterization of a-Si:H/c-Si interfaces by effective-lifetime measurements
(American Institute of Physics (AIP), 2005-11)
Article
Restricted access - publisher's policyThis article studies theoretically and experimentally the recombination at the amorphous/crystalline silicon interface of a heterojunction with intrinsic thin layer (HIT) structure without metallization. We propose a ... -
Charge trapping control in MOS capacitors
(Institute of Electrical and Electronics Engineers (IEEE), 2016-12-26)
Article
Open AccessThis paper presents an active control of C-V characteristic for MOS capacitors based on Sliding Mode control and sigma-delta-modulation. The capacitance of the device at a certain voltage is measured periodically and ... -
“Cold” process for IBC c-Si solar cells fabrication
(Elsevier, 2016)
Conference lecture
Open Access -
Crystalline silicon solar cells beyond 20% efficiency
(IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
Conference report
Open Access—This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have ... -
Crystalline silicon surface passivation by amorphous silicon carbide films
(2006-10)
Article
Restricted access - publisher's policyThis article reviews the surface passivation of n- and p-type crystalline silicon by hydrogenated amorphous silicon carbide films, which provide surface recombination velocities in the range of 10 cm s-1. Films are deposited ... -
Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition
(American Institute of Physics (AIP), 2005-12)
Article
Restricted access - publisher's policySurface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been ... -
Development of LASER fired contacts on silicon heterojunction solar cells for the application to rear contact structures
(2010-04)
Article
Restricted access - publisher's policyIn this work, we present our progress in contacting both doped and undoped a-Si:H layers using a LASER tool and show some applications for three different HJ solar cell designs: standard (p-type), rear emitter (n-type) and ...
