Exploració per autor "Canal Corretger, Ramon"
Ara es mostren els items 1-20 de 49
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A cost-effective clustered architecture
(Institute of Electrical and Electronics Engineers (IEEE), 1999)
Text en actes de congrés
Accés obertIn current superscalar processors, all floating-point resources are idle during the execution of integer programs. As previous works show, this problem can be alleviated if the floating-point cluster is extended to execute ... -
A detailed methodology to compute soft error rates in advanced technologies
(Institute of Electrical and Electronics Engineers (IEEE), 2016)
Text en actes de congrés
Accés restringit per política de l'editorialSystem reliability has become a key design aspect for computer systems due to the aggressive technology miniaturization. Errors are typically dominated by transient faults due to radiation and are strongly related to the ... -
An energy-efficient and scalable eDRAM-based register file architecture for GPGPU
(ACM, 2013)
Text en actes de congrés
Accés restringit per política de l'editorialThe heavily-threaded data processing demands of streaming multiprocessors (SM) in a GPGPU require a large register file (RF). The fast increasing size of the RF makes the area cost and power consumption unaffordable for ... -
An hybrid eDRAM/SRAM macrocell to implement first-level data caches
(Association for Computing Machinery (ACM), 2009)
Text en actes de congrés
Accés restringit per política de l'editorialSRAM and DRAM cells have been the predominant technologies used to implement memory cells in computer systems, each one having its advantages and shortcomings. SRAM cells are faster and require no refresh since reads are ... -
A novel variation-tolerant 4T-DRAM cell with enhanced soft-error tolerance
(IEEE Computer Society Publications, 2012)
Text en actes de congrés
Accés restringit per política de l'editorialIn view of device scaling issues, embedded DRAM (eDRAM) technology is being considered as a strong alternative to conventional SRAM for use in on-chip memories. Memory cells designed using eDRAM technology in addition ... -
Circuit propagation delay estimation through multivariate regression-based modeling under spatio-temporal variability
(Institute of Electrical and Electronics Engineers (IEEE), 2010)
Text en actes de congrés
Accés restringit per política de l'editorialWith every process generation, the problem of variability in physical parameters and environmental conditions poses a great challenge to the design of fast and reliable circuits. Propagation delays which decide circuit ... -
Combining RAM technologies for hard-error recovery in L1 data caches working at very-low power modes
(2013)
Text en actes de congrés
Accés restringit per política de l'editorialLow-power modes in modern microprocessors rely on low frequencies and low voltages to reduce the energy budget. Nevertheless, manufacturing induced parameter variations can make SRAM cells unreliable producing hard errors ... -
Comparison of SRAM cells for 10-nm SOI FinFETs under process and environmental variations
(2012-12)
Article
Accés restringit per política de l'editorialWe explore the 6T and 8T SRAM design spaces through read static noise margin (RSNM), word-line write margin, and leakage for future 10-nm FinFETs. Process variations are based on the ITRS and modeled at device (TCAD) level. ... -
Cross-layer system reliability assessment framework for hardware faults
(Institute of Electrical and Electronics Engineers (IEEE), 2016)
Text en actes de congrés
Accés obertSystem reliability estimation during early design phases facilitates informed decisions for the integration of effective protection mechanisms against different classes of hardware faults. When not all system abstraction ... -
DRAM-based coherent caches and how to take advantage of the coherence protocol to reduce the refresh energy
(European Interactive Digital Advertising Alliance (EDAA), 2014)
Text en actes de congrés
Accés restringit per política de l'editorialRecent technology trends has turned DRAMs into an interesting candidate to substitute traditional SRAM-based on-chip memory structures (i.e. register file, cache memories). Nevertheless, a major problem to introduce these ... -
Dynamic cluster assignment mechanisms
(Institute of Electrical and Electronics Engineers (IEEE), 2000)
Text en actes de congrés
Accés obertClustered microarchitectures are an effective approach to reducing the penalties caused by wire delays inside a chip. Current superscalar processors have in fact a two-cluster microarchitecture with a naive code partitioning ... -
Dynamic fine-grain body biasing of caches with latency and leakage 3T1D-based monitors
(2011-04-15)
Report de recerca
Accés obertIn this paper, we propose a dynamically tunable fine-grain body biasing mechanism to reduce active & standby leakage power in caches under process variations. -
Effectiveness of hybrid recovery techniques on parametric failures
(Institute of Electrical and Electronics Engineers (IEEE), 2013)
Text en actes de congrés
Accés restringit per política de l'editorialModern day microprocessors effectively utilise supply voltage scaling for tremendous power reduction. The minimum voltage beyond which a processor cannot operate reliably is defined as V ddmin. On-chip memories like caches ... -
Elastic cooperative caching: an autonomus dynamically adaptive memory hierarchy for chip multiprocessors
(Association for Computing Machinery (ACM), 2010)
Text en actes de congrés
Accés restringit per política de l'editorialNext generation tiled microarchitectures are going to be limited by off-chip misses and by on-chip network usage. Furthermore, these platforms will run an heterogeneous mix of applications with very different memory needs, ... -
Enhancing 3T DRAMs for SRAM replacement under 10nm tri-gate SOI FinFETs
(IEEE Computer Society Publications, 2012)
Text en actes de congrés
Accés restringit per política de l'editorialIn this paper, we pr esent the dynamic 3T memory cell for future 10nm tri-gate FinFETs as a potential replacement for classical 6T SRAM cell for implementation in high speed cache memories. We investigate read access ... -
FinFET and III-V/Ge technology impact on 3T1D cell behavior
(2013)
Comunicació de congrés
Accés obertIn this work, we assess the performance of a ring oscillator and a DRAM cell when they are implemented with different technologies (planar CMOS, FinFET and III-V MOSFETs), and subjected to different reliability ... -
Impact of finfet and III-V/Ge technology on logic and memory cell behavior
(2013-11-20)
Article
Accés restringit per política de l'editorialIn this work, we assess the performance of a ring oscillator and a DRAM cell when they are implemented with different technologies (planar CMOS, FinFET and III-V MOSFETs), and subjected to different reliability scenarios ... -
Impact of positive bias temperature instability (PBTI)
(2011)
Text en actes de congrés
Accés restringit per política de l'editorialMemory circuits are playing a key role in complex multicore systems with both data and instructions storage and mailbox communication functions. There is a general concern that conventional SRAM cell based on the 6T structure ... -
INFORMER: an integrated framework for early-stage memory robustness analysis
(European Interactive Digital Advertising Alliance (EDAA), 2014)
Text en actes de congrés
Accés restringit per política de l'editorialWith the growing importance of parametric (process and environmental) variations in advanced technologies, it has become a serious challenge to design reliable, fast and low-power embedded memories. Adopting a variation-aware ... -
iRMW: A low-cost technique to reduce NBTI-dependent parametric failures in L1 data caches
(Institute of Electrical and Electronics Engineers (IEEE), 2014)
Text en actes de congrés
Accés obertNegative bias temperature instability (NBTI) is a major cause of concern for chip designers because of its inherent ability to drastically reduce silicon reliability over the lifetime of the processor. Coupled with statistical ...
