Listar por autor "Nafría Maqueda, Montserrat"
Mostrando ítems 1-20 de 20
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A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture
(2014-05-05)
Artículo
Acceso restringido por política de la editorial -
A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI
(2018-01-01)
Artículo
Acceso abiertoStatistical characterization of CMOS transistor variability phenomena in modern nanometer technologies is key for accurate end-of-life prediction. This paper presents a novel CMOS transistor array chip to statistically ... -
Aging in CMOS RF linear power amplifiers: an experimental study
(IEEE Microwave Theory and Techniques Society, 2021-02-01)
Artículo
Acceso abiertoAn extensive experimental analysis of the hot carrier injection (HCI) and bias temperature instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article. Two different 2.45-GHz PA topologies ... -
Aging in CMOS RF linear power amplifiers: experimental comparison and modeling
(Institute of Electrical and Electronics Engineers (IEEE), 2019)
Texto en actas de congreso
Acceso restringido por política de la editorialThis paper characterizes experimentally the aging degradation experienced by two different 2.45 GHz power amplifier circuits of similar performance, implemented in a 65 nm CMOS technology. Results demonstrate the importance ... -
Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology
(Institute of Electrical and Electronics Engineers (IEEE), 2018)
Texto en actas de congreso
Acceso restringido por política de la editorialElectronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant ... -
Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers
(Institute of Electrical and Electronics Engineers (IEEE), 2014)
Texto en actas de congreso
Acceso abiertoA new method for the analysis of multilevel Random Telegraph Noise (RTN) signals has been recently presented, which can also be applied in the case of large background noise. In this work, the method is extended to evaluate ... -
CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging
(2022-05-01)
Artículo
Acceso abiertoIn this work, CMOS inverters are subjected to electrical stress emulating a complete operation cycle and the shifts in the performance parameters (i.e., peak current and inversion voltage) evaluated. Moreover, degradation ... -
Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations
(Institute of Electrical and Electronics Engineers (IEEE), 2017)
Texto en actas de congreso
Acceso restringido por política de la editorialThis paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation ... -
Experimental Characterization of NBTI Effect on pMOSFET and CMOS Inverter
(2009-02)
Comunicación de congreso
Acceso abierto -
Experimental investigation of memristance enhancement
(2019)
Texto en actas de congreso
Acceso restringido por política de la editorialMemristor devices are two-terminal nanoscale circuit elements that exhibit nonvolatile information storing and can be manufactured in ultra-dense arrays with low-power operation. Although, theoretically, memristors are ... -
Experimental time evolution study of the HFO-based IMPLY gate operation
(2018-02-01)
Artículo
Acceso abiertoIn the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a ... -
Experimental verification of memristor-based material implication NAND operation
(Institute of Electrical and Electronics Engineers (IEEE), 2017-10-11)
Artículo
Acceso abiertoMemristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more ... -
Exploring the “resistance change per energy unit” as universal performance parameter for resistive switching devices
(2020-03-01)
Artículo
Acceso abiertoResistive switching (RS) device (memristor) technology is continuously maturing towards industrial establishment. There are RS devices that demonstrate an “incremental” (analog) switching behavior, whereas others change ... -
Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements
(2021-10-01)
Artículo
Acceso abiertoIn this work, an ‘on-the-fly’ measurement technique for the monitoring of CMOS inverters performance degradation is presented. This technique allows the characterization of the circuit degradation simultaneously with the ... -
MOSFET degradation dependence on input signal power in a RF power amplifier
(2017-06-25)
Artículo
Acceso abiertoAging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ... -
Noise-induced Performance Enhancement of Variability-aware Memristor Networks
(2019)
Texto en actas de congreso
Acceso restringido por política de la editorialMemristor networks are capable of low-power, massive parallel processing and information storage. Moreover, they have widely used for a vast number of intelligent data analysis applications targeting mobile edge devices ... -
Power-efficient noise-Induced reduction of ReRAM cell’s temporal variability effects
(2021-04)
Artículo
Acceso abiertoResistive Random Access Memory (ReRAM) is apromising novel memory technology for non-volatile storing, with low-power operation and ultra-high area density. However, ReRAM memories still face issues through commerciali ... -
Shape-shifting digital hardware concept: towards a new adaptive computing system
(IEEE Press. Institute of Electrical and Electronics Engineers, 2012)
Comunicación de congreso
Acceso restringido por política de la editorialIn this paper a new approach to implement adaptive hardware (AH) based on memFETs crossbar structure is presented. We report a novel computing hardware principle called Shape-Shifting Digital Hardware (SSDH) oriented ... -
Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells
(Institute of Electrical and Electronics Engineers (IEEE), 2017)
Texto en actas de congreso
Acceso restringido por política de la editorialRandom Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is ... -
Stochastic resonance effect in binary STDP performed by RRAM devices
(Institute of Electrical and Electronics Engineers (IEEE), 2022)
Texto en actas de congreso
Acceso abiertoThe beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron ...
