Browsing by Author "Nafría Maqueda, Montserrat"Més informació

Now showing items 1-9 of 9

    • A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture 

      Martín Martínez, Javier; García Almudéver, Carmen; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio (2014-05-05)
      Article
      Restricted access - publisher's policy

    • A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI 

      Diaz Fortuny, Javier; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Castro López, Rafael; Roca Moreno, Elisenda; Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Mateo Peña, Diego; Fernández Fernández, Francisco V.; Nafría Maqueda, Montserrat (2018-01-01)
      Article
      Open Access
      Statistical characterization of CMOS transistor variability phenomena in modern nanometer technologies is key for accurate end-of-life prediction. This paper presents a novel CMOS transistor array chip to statistically ...

    • Aging in CMOS RF linear power amplifiers: experimental comparison and modeling 

      Aragonès Cervera, Xavier; Mateo Peña, Diego; Barajas Ojeda, Enrique; Crespo-Yepes, A.; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2019)
      Conference report
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      This paper characterizes experimentally the aging degradation experienced by two different 2.45 GHz power amplifier circuits of similar performance, implemented in a 65 nm CMOS technology. Results demonstrate the importance ...

    • Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations 

      Barajas Ojeda, Enrique; Mateo Peña, Diego; Aragonès Cervera, Xavier; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference report
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      This paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation ...

    • Experimental Characterization of NBTI Effect on pMOSFET and CMOS Inverter 

      Fernández García, Raúl; Kaczer, Ben; Gago Barrio, Javier; Rodríguez, Rosana; Nafría Maqueda, Montserrat (2009-02)
      Conference lecture
      Open Access

    • Experimental verification of memristor-based material implication NAND operation 

      Maestro Izquierdo, Marcos; Martin Martínez, Javier; Crespo Yepes, Albert; Escudero López, Manuel; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Aymerich Humet, Xavier; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017-10-11)
      Article
      Open Access
      Memristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more ...

    • Exploring the “resistance change per energy unit” as universal performance parameter for resistive switching devices 

      Gómez Mir, Jorge Tomás; Vourkas, Ioannis; Abusleme, Angel; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio (2020-03-01)
      Article
      Open Access
      Resistive switching (RS) device (memristor) technology is continuously maturing towards industrial establishment. There are RS devices that demonstrate an “incremental” (analog) switching behavior, whereas others change ...

    • MOSFET degradation dependence on input signal power in a RF power amplifier 

      Crespo Yepes, Albert; Barajas Ojeda, Enrique; Martin Martínez, Javier; Mateo Peña, Diego; Aragonès Cervera, Xavier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2017-06-25)
      Article
      Open Access
      Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ...

    • Shape-shifting digital hardware concept: towards a new adaptive computing system 

      Rubio Sola, Jose Antonio; García Almudéver, Carmen; Martin, Javier; Crespo, A.; Rodriguez, Rosa; Nafría Maqueda, Montserrat (IEEE Press. Institute of Electrical and Electronics Engineers, 2012)
      Conference lecture
      Restricted access - publisher's policy
      In this paper a new approach to implement adaptive hardware (AH) based on memFETs crossbar structure is presented. We report a novel computing hardware principle called Shape-Shifting Digital Hardware (SSDH) oriented ...