Now showing items 1-20 of 20

    • A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture 

      Martín Martínez, Javier; García Almudéver, Carmen; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio (2014-05-05)
      Article
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    • A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI 

      Diaz Fortuny, Javier; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Castro López, Rafael; Roca Moreno, Elisenda; Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Mateo Peña, Diego; Fernández Fernández, Francisco V.; Nafría Maqueda, Montserrat (2018-01-01)
      Article
      Open Access
      Statistical characterization of CMOS transistor variability phenomena in modern nanometer technologies is key for accurate end-of-life prediction. This paper presents a novel CMOS transistor array chip to statistically ...
    • Aging in CMOS RF linear power amplifiers: an experimental study 

      Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Crespo Yepes, Albert; Mateo Peña, Diego; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (IEEE Microwave Theory and Techniques Society, 2021-02-01)
      Article
      Open Access
      An extensive experimental analysis of the hot carrier injection (HCI) and bias temperature instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article. Two different 2.45-GHz PA topologies ...
    • Aging in CMOS RF linear power amplifiers: experimental comparison and modeling 

      Aragonès Cervera, Xavier; Mateo Peña, Diego; Barajas Ojeda, Enrique; Crespo-Yepes, A.; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2019)
      Conference report
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      This paper characterizes experimentally the aging degradation experienced by two different 2.45 GHz power amplifier circuits of similar performance, implemented in a 65 nm CMOS technology. Results demonstrate the importance ...
    • Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology 

      Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Porti Pujal, Marc; Nafría Maqueda, Montserrat; Castro López, Rafael; Roca Moreno, Elisenda; Fernandez, Francisco V. (Institute of Electrical and Electronics Engineers (IEEE), 2018)
      Conference report
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      Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant ...
    • Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers 

      Martín Martínez, Javier; Diaz, Javier; Rodríguez, Rosana; Nafría Maqueda, Montserrat; Aymerich Humet, Xavier; Roca Moreno, Elisenda; Fernández Fernández, Francisco V.; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2014)
      Conference report
      Open Access
      A new method for the analysis of multilevel Random Telegraph Noise (RTN) signals has been recently presented, which can also be applied in the case of large background noise. In this work, the method is extended to evaluate ...
    • CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging 

      Crespo Yepes, Albert; Nasarre Campo, Carles; Garsot Borras, Norbert; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Nafría Maqueda, Montserrat (2022-05-01)
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      In this work, CMOS inverters are subjected to electrical stress emulating a complete operation cycle and the shifts in the performance parameters (i.e., peak current and inversion voltage) evaluated. Moreover, degradation ...
    • Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations 

      Barajas Ojeda, Enrique; Mateo Peña, Diego; Aragonès Cervera, Xavier; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference report
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      This paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation ...
    • Experimental Characterization of NBTI Effect on pMOSFET and CMOS Inverter 

      Fernández García, Raúl; Kaczer, Ben; Gago Barrio, Javier; Rodríguez, Rosana; Nafría Maqueda, Montserrat (2009-02)
      Conference lecture
      Open Access
    • Experimental investigation of memristance enhancement 

      Ntinas, Vasileios; Rubio Sola, Jose Antonio; Sirakoulis, Georgios; Rodriguez, Rosana; Nafría Maqueda, Montserrat (2019)
      Conference report
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      Memristor devices are two-terminal nanoscale circuit elements that exhibit nonvolatile information storing and can be manufactured in ultra-dense arrays with low-power operation. Although, theoretically, memristors are ...
    • Experimental time evolution study of the HFO-based IMPLY gate operation 

      Maestro, M; Marin-Martinez, J.; Crespo-Yepes, A.; Escudero, Manel; Rodriguez, R.; Nafría Maqueda, Montserrat; Aymerich, X.; Rubio Sola, Jose Antonio (2018-02-01)
      Article
      Open Access
      In the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a ...
    • Experimental verification of memristor-based material implication NAND operation 

      Maestro Izquierdo, Marcos; Martin Martínez, Javier; Crespo Yepes, Albert; Escudero López, Manuel; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Aymerich Humet, Xavier; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017-10-11)
      Article
      Open Access
      Memristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more ...
    • Exploring the “resistance change per energy unit” as universal performance parameter for resistive switching devices 

      Gómez Mir, Jorge Tomás; Vourkas, Ioannis; Abusleme, Angel; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio (2020-03-01)
      Article
      Open Access
      Resistive switching (RS) device (memristor) technology is continuously maturing towards industrial establishment. There are RS devices that demonstrate an “incremental” (analog) switching behavior, whereas others change ...
    • Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements 

      Crespo Yepes, Albert; Ramos Hortal, Regina; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2021-10-01)
      Article
      Open Access
      In this work, an ‘on-the-fly’ measurement technique for the monitoring of CMOS inverters performance degradation is presented. This technique allows the characterization of the circuit degradation simultaneously with the ...
    • MOSFET degradation dependence on input signal power in a RF power amplifier 

      Crespo Yepes, Albert; Barajas Ojeda, Enrique; Martin Martínez, Javier; Mateo Peña, Diego; Aragonès Cervera, Xavier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2017-06-25)
      Article
      Open Access
      Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ...
    • Noise-induced Performance Enhancement of Variability-aware Memristor Networks 

      Ntinas, Vasileios; Fyrigos, Iosif; Sirakoulis, Georgios; Rubio Sola, Jose Antonio; Martin Martinez, Javier; Rodriguez, Rosana; Nafría Maqueda, Montserrat (2019)
      Conference report
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      Memristor networks are capable of low-power, massive parallel processing and information storage. Moreover, they have widely used for a vast number of intelligent data analysis applications targeting mobile edge devices ...
    • Power-efficient noise-Induced reduction of ReRAM cell’s temporal variability effects 

      Ntinas, Vasileios; Rubio Sola, Jose Antonio; Sirakoulis, Georgios; Salvador, Emili; Pedro, Marta; Crespo-Yepes, A.; Martin Martinez, Javier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2021-04)
      Article
      Open Access
      Resistive Random Access Memory (ReRAM) is apromising novel memory technology for non-volatile storing, with low-power operation and ultra-high area density. However, ReRAM memories still face issues through commerciali ...
    • Shape-shifting digital hardware concept: towards a new adaptive computing system 

      Rubio Sola, Jose Antonio; García Almudéver, Carmen; Martin, Javier; Crespo, A.; Rodriguez, Rosa; Nafría Maqueda, Montserrat (IEEE Press. Institute of Electrical and Electronics Engineers, 2012)
      Conference lecture
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      In this paper a new approach to implement adaptive hardware (AH) based on memFETs crossbar structure is presented. We report a novel computing hardware principle called Shape-Shifting Digital Hardware (SSDH) oriented ...
    • Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells 

      Martinez, Javier; Rodriguez, Rosa; Nafría Maqueda, Montserrat; Torrents, Gabriel; Bota, Sebastian A .; Segura, Jaume; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference report
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      Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is ...
    • Stochastic resonance effect in binary STDP performed by RRAM devices 

      Salvador Aguilera, Emili; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Crespo Yepes, Albert; Miranda Castellano, Enrique Alberto; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio; Ntinas, Vasileios; Sirakoulis, Georgios Ch. (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Conference report
      Open Access
      The beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron ...