The effects of negative bias temperature instability (NBTI) on the sub-threshold performance of a pFET have been investigated by means of experimental methods. Specifically, the sub-threshold slope under static and dynamic NBTI stress has been characterized for different NBTI stress conditions. In order to perform the characterization, a proposal based on an alternative measurement technique to obtain the sub-threshold slope is presented. Our first results indicate that similar sub-threshold slope is obtained in all stress conditions.
CitationFernandez, R.; Gil, I. An alternative characterization method of PFET sub-threshold slope under NBTI stress. A: European Solid State Device Research Conference. "ESSDERC". Sevilla: 2010.
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