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Characterization of transition metal Oxide/Silicon heterojunctions for solar cell applications
dc.contributor.author | Gerling Sarabia, Luis Guillermo |
dc.contributor.author | Mahato, Somnath |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2016-06-02T15:20:06Z |
dc.date.available | 2016-06-02T15:20:06Z |
dc.date.issued | 2015-10-09 |
dc.identifier.citation | Gerling Sarabia, L., Mahato, S., Voz, C., Alcubilla, R., Puigdollers, J. Characterization of transition metal Oxide/Silicon heterojunctions for solar cell applications. "Applied Sciences", 09 Octubre 2015, vol. 5, núm. 4, p. 695-705. |
dc.identifier.issn | 2076-3417 |
dc.identifier.uri | http://hdl.handle.net/2117/87667 |
dc.description.abstract | During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides (V2O5, MoO3, WO3, and ReO3) with high work functions (>5 eV) were thermally evaporated as front p-type contacts in planar n-type crystalline silicon heterojunction solar cells. The concentration of oxygen vacancies in MoO3-x was found to be dependent on film thickness and redox conditions, as determined by X-ray Photoelectron Spectroscopy. Transfer length method measurements of oxide films deposited on glass yielded high sheet resistances (~109 O/sq), although lower values (~104 O/sq) were measured for oxides deposited on silicon, indicating the presence of an inversion (hole rich) layer. Of the four oxide/silicon solar cells, ReO3 was found to be unstable upon air exposure, while V2O5 achieved the highest open-circuit voltage (593 mV) and conversion efficiency (12.7%), followed by MoO3 (581 mV, 12.6%) and WO3 (570 mV, 11.8%). A short-circuit current gain of ~0.5 mA/cm2 was obtained when compared to a reference amorphous silicon contact, as expected from a wider energy bandgap. Overall, these results support the viability of a simplified solar cell design, processed at low temperature and without dopants. |
dc.format.extent | 11 p. |
dc.language.iso | eng |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
dc.subject.lcsh | Solar cells |
dc.subject.lcsh | Transition metal compounds |
dc.subject.other | Transition metal oxides |
dc.subject.other | Silicon heterojunction solar cells |
dc.subject.other | Vanadium oxide |
dc.subject.other | Molybdenum oxide |
dc.subject.other | Tungsten oxide |
dc.subject.other | Rhenium oxide |
dc.title | Characterization of transition metal Oxide/Silicon heterojunctions for solar cell applications |
dc.type | Article |
dc.subject.lemac | Cèl·lules solars |
dc.subject.lemac | Metalls de transició -- Compostos |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.3390/app5040695 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://www.mdpi.com/2076-3417/5/4/695 |
dc.rights.access | Open Access |
local.identifier.drac | 18544932 |
dc.description.version | Postprint (published version) |
local.citation.author | Gerling Sarabia, L.; Mahato, S.; Voz, C.; Alcubilla, R.; Puigdollers, J. |
local.citation.publicationName | Applied Sciences |
local.citation.volume | 5 |
local.citation.number | 4 |
local.citation.startingPage | 695 |
local.citation.endingPage | 705 |
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