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dc.contributor.authorGerling Sarabia, Luis Guillermo
dc.contributor.authorMahato, Somnath
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2016-06-02T15:20:06Z
dc.date.available2016-06-02T15:20:06Z
dc.date.issued2015-10-09
dc.identifier.citationGerling Sarabia, L., Mahato, S., Voz, C., Alcubilla, R., Puigdollers, J. Characterization of transition metal Oxide/Silicon heterojunctions for solar cell applications. "Applied Sciences", 09 Octubre 2015, vol. 5, núm. 4, p. 695-705.
dc.identifier.issn2076-3417
dc.identifier.urihttp://hdl.handle.net/2117/87667
dc.description.abstractDuring the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides (V2O5, MoO3, WO3, and ReO3) with high work functions (>5 eV) were thermally evaporated as front p-type contacts in planar n-type crystalline silicon heterojunction solar cells. The concentration of oxygen vacancies in MoO3-x was found to be dependent on film thickness and redox conditions, as determined by X-ray Photoelectron Spectroscopy. Transfer length method measurements of oxide films deposited on glass yielded high sheet resistances (~109 O/sq), although lower values (~104 O/sq) were measured for oxides deposited on silicon, indicating the presence of an inversion (hole rich) layer. Of the four oxide/silicon solar cells, ReO3 was found to be unstable upon air exposure, while V2O5 achieved the highest open-circuit voltage (593 mV) and conversion efficiency (12.7%), followed by MoO3 (581 mV, 12.6%) and WO3 (570 mV, 11.8%). A short-circuit current gain of ~0.5 mA/cm2 was obtained when compared to a reference amorphous silicon contact, as expected from a wider energy bandgap. Overall, these results support the viability of a simplified solar cell design, processed at low temperature and without dopants.
dc.format.extent11 p.
dc.language.isoeng
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subject.lcshSolar cells
dc.subject.lcshTransition metal compounds
dc.subject.otherTransition metal oxides
dc.subject.otherSilicon heterojunction solar cells
dc.subject.otherVanadium oxide
dc.subject.otherMolybdenum oxide
dc.subject.otherTungsten oxide
dc.subject.otherRhenium oxide
dc.titleCharacterization of transition metal Oxide/Silicon heterojunctions for solar cell applications
dc.typeArticle
dc.subject.lemacCèl·lules solars
dc.subject.lemacMetalls de transició -- Compostos
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.3390/app5040695
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://www.mdpi.com/2076-3417/5/4/695
dc.rights.accessOpen Access
local.identifier.drac18544932
dc.description.versionPostprint (published version)
local.citation.authorGerling Sarabia, L.; Mahato, S.; Voz, C.; Alcubilla, R.; Puigdollers, J.
local.citation.publicationNameApplied Sciences
local.citation.volume5
local.citation.number4
local.citation.startingPage695
local.citation.endingPage705


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