A large signal nonlinear MODFET model from small signal S-parameters
Cita com:
hdl:2117/87376
Tipus de documentText en actes de congrés
Data publicació1989
Condicions d'accésAccés obert
Llevat que s'hi indiqui el contrari, els
continguts d'aquesta obra estan subjectes a la llicència de Creative Commons
:
Reconeixement-NoComercial-SenseObraDerivada 3.0 Espanya
Abstract
A general technique for predicting the MODFET large signal performance has been developed. The technique is based entirely on experimental data (small signal S-parameters at different biased points) and therefore is independent of the structure of the FET. Software requirements include a program to fit an equivalent circuit to S parameter data; a simple least-square polynomial approximation program; and SPICE for nonlinear time-domain simulations. Hardware requirements are basically limited to a network analyzer to carry out the small-signal S parameter measurements. Measurements at 10 GHz confirm the validity of the model.
CitacióO'callaghan, J., Beyer, J. A large signal nonlinear MODFET model from small signal S-parameters. A: IEEE MTT-S International Microwave Symposium. "1989 IEEE MTT-S International Microwave Symposium Digest: June 13-15, 1989: Long Beach, California". 1989, p. 347-350.
Versió de l'editorhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=38736
Fitxers | Descripció | Mida | Format | Visualitza |
---|---|---|---|---|
A large signal ... ll signal S-parameters.pdf | 270,2Kb | Visualitza/Obre |