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FET noise-parameter determination using a novel technique based on 50 noise measurements
dc.contributor.author | Lázaro Guillén, Antoni |
dc.contributor.author | Pradell i Cara, Lluís |
dc.contributor.author | O'Callaghan Castellà, Juan Manuel |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions |
dc.date.accessioned | 2016-04-28T08:09:27Z |
dc.date.available | 2016-04-28T08:09:27Z |
dc.date.issued | 1999-03 |
dc.identifier.citation | Lazaro, A., Pradell, L., O'callaghan, J. FET noise-parameter determination using a novel technique based on 50 noise measurements. "IEEE transactions on microwave theory and techniques", Març 1999, vol. 47, núm. 3, p. 315-324. |
dc.identifier.issn | 0018-9480 |
dc.identifier.uri | http://hdl.handle.net/2117/86312 |
dc.description.abstract | A novel method for measuring the four noise parameters of a field-effect transistor (FET) is presented. It is based on the determination of its intrinsic noise matrix elements [CINT 11 , CINT 22 , Re(CINT 12 ), Im(CINT 12 )] by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points, thus, a tuner is not required. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources. The receiver full-noise calibration is easily performed by using a set of coaxial and on-wafer standards that are commonly available in a microwave laboratory, thus, an expensive broad-band tuner is not required for calibration either. On-wafer experimental verification up to 26 GHz is presented and a comparison with other F50-based and tunerbased methods is given. As an application, the dependence of the FET intrinsic noise sources as a function of the bias drain–current and gate–length is obtained. |
dc.format.extent | 10 p. |
dc.language.iso | eng |
dc.publisher | IEEE Microwave Theory and Techniques Society |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica |
dc.subject.lcsh | Hearing |
dc.subject.other | Acoustic reflection |
dc.subject.other | Calibration |
dc.title | FET noise-parameter determination using a novel technique based on 50 noise measurements |
dc.type | Article |
dc.subject.lemac | Oïda |
dc.contributor.group | Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones |
dc.identifier.doi | 10.1109/22.750233 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=750233 |
dc.rights.access | Open Access |
local.identifier.drac | 1635281 |
dc.description.version | Postprint (published version) |
local.citation.author | Lazaro, A.; Pradell, L.; O'callaghan, J. |
local.citation.publicationName | IEEE transactions on microwave theory and techniques |
local.citation.volume | 47 |
local.citation.number | 3 |
local.citation.startingPage | 315 |
local.citation.endingPage | 324 |
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