A large signal nonlinear MODFET model from small signal S-parameters
Tipus de documentText en actes de congrés
EditorInstitute of Electrical and Electronics Engineers (IEEE)
Condicions d'accésAccés obert
A general technique for predicting the MODFET large signal performance has been developed. The technique is based entirely on experimental data (small signal S-parameters at different biased points) and therefore is independent of the structure of the FET. Software requirements include a program to fit an equivalent circuit to S parameter data; a simple least-square polynomial approximation program; and SPICE for nonlinear time-domain simulations. Hardware requirements are basically limited to a network analyzer to carry out the small-signal S parameter measurements. Measurements at 10 GHz confirm the validity of the model.
CitacióO'callaghan, J., Beyer, J. A large signal nonlinear MODFET model from small signal S-parameters. A: IEEE MTT-S International Microwave Symposium. "Microwave Symposium Digest (MTT), 1989 IEEE MTT-S International". Institute of Electrical and Electronics Engineers (IEEE), 1989, p. 347-350.