S-parameter measurement of chip Ga As FETs up to 22 GHz using the TRL calibration technique
Document typeConference report
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessOpen Access
In this paper, the design of a Microstrip Test Fixture for TRL calibration is described. Experimental results for S-parameters measurement of a GaAs FET chip in the 3-22 GHz frequency range are presented. Repeatability of connections and measurements is discussed and experimental results are also presented.
CitationPradell, L., Artal, E., Sabater, C. S-parameter measurement of chip Ga As FETs up to 22 GHz using the TRL calibration technique. A: European Microwave Conference. "Conference proceedings, 19th European Microwave Conference Monday 4th to Thursday 7th September 1989, Wembley Conference Centre, London, United Kingdom". London: Institute of Electrical and Electronics Engineers (IEEE), 1989, p. 576-581.
ISBN0 946821 76 3