EditorInstitute of Electrical and Electronics Engineers (IEEE)
Condicions d'accésAccés restringit per política de l'editorial
The superior electrical characteristics of the heterojunction III-V Tunnel FET (TFET) devices can outperform current
technologies in the process of energy harvesting conversion at ultra-low power supply voltage operation (sub-0.25 V). In this work, it is
shown by simulations that a cross-coupled switched-capacitor topology with GaSb-InAs TFET devices present better conversion
performance compared to the use of Si FinFET technology at low temperature variations
(¿T < 3 ºC) when considering a thermo-electric energy harvesting source (with a = 80 mV/K). At higher ¿T, the conversion process is
degraded with the increase of the transistor losses. Considering a ¿T of 1 ºC (2 ºC), one cross-coupled stage with TFET devices can
achieve 74 % (69 %) of power conversion efficiency when considering an output load of 0.4 µA (6 µA). At the same conditions, the
FinFET charge pump is shown inefficient.
CitacióNunes, D., Moll, F., Valtchev, S. Pespectives of TFET devices in ultra-low power charge pumps for thermo-electric energy sources. A: IEEE International Symposium on Circuits and Systems. "2015 IEEE International Symposium on Circuits and Systems (ISCAS 2015): Lisbon, Portugal: 24-27 May 2015". Lisbon: Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 1082-1085.