CMOS BEOL-embedded z-axis accelerometer
Cita com:
hdl:2117/84998
Tipus de documentArticle
Data publicació2015-05-28
EditorInstitution of Electrical Engineers
Condicions d'accésAccés obert
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Reconeixement-NoComercial-SenseObraDerivada 3.0 Espanya
Abstract
A first reported complementary metal-oxide semiconductor (CMOS)-integrated acceleration sensor obtained through isotropic inter-metal dielectric (IMD) etching of a back-end-of-line (BEOL) integrated circuit interconnection stack, without any additional substrate etching steps, is presented. The mechanical device composed of a CMOS-process 8 mu m-thick metal-via-metal stack of 135 mu m diameter and suspended 2.5 mu m over a bottom fixed electrode, has a resonance frequency of 20 kHz, a sensing capacitance of 50 fF with sensitivity 14 aF/G and it is integrated on the same substrate with a simple low-noise amplifier reaching 25 mG of RMS noise measured from 0.25 to 100 Hz bandwidth.
CitacióMichalik, P., J.M. Sánchez-Chiva, Fernandez, D., Madrenas, J. CMOS BEOL-embedded z-axis accelerometer. "Electronics Letters", 28 Maig 2015, vol. 51, núm. 11.
ISSN0013-5194
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