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On-chip thermal testing using MOSFETs in weak inversion
dc.contributor.author | Reverter Cubarsí, Ferran |
dc.contributor.author | Altet Sanahujes, Josep |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2016-03-17T16:02:57Z |
dc.date.available | 2016-03-17T16:02:57Z |
dc.date.issued | 2015-02-01 |
dc.identifier.citation | Reverter, F., Altet, J. On-chip thermal testing using MOSFETs in weak inversion. "IEEE transactions on instrumentation and measurement", 01 Febrer 2015, vol. 64, núm. 2, p. 524-532. |
dc.identifier.issn | 0018-9456 |
dc.identifier.uri | http://hdl.handle.net/2117/84660 |
dc.description.abstract | This paper analyzes the feasibility of using metal-oxide-semiconductor field-effect transistors (MOSFETs) operating in weak inversion as temperature sensors for on-chip thermal testing applications. MOSFETs in weak inversion are theoretically analyzed so as to know how their sensitivity to temperature depends on both dimensions and bias current. Theoretical predictions are then compared with simulations and experimental data resulting from MOSFETs fabricated in a commercial 0.35-µm CMOS technology. The MOSFETs are experimentally subjected to changes of temperature generated by either a heating chamber or an on-chip power dissipating device. The performance of MOSFETs in weak inversion is also compared with that in strong inversion and with that of parasitic bipolar junction transistors. In the context of on-chip thermal testing, MOSFETs in weak inversion offer advantages in terms of layout area, linearity, current consumption, and spread of the sensitivity to temperature due to process variations. |
dc.format.extent | 9 p. |
dc.language.iso | eng |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Enginyeria de la telecomunicació |
dc.subject.lcsh | Metal semiconductor field-effect transistors |
dc.subject.other | Metal-oxide-semiconductor field-effect transistors (MOSFETs) sensor |
dc.subject.other | subthreshold operation |
dc.subject.other | temperature sensor |
dc.subject.other | thermal testing |
dc.subject.other | weak inversion |
dc.title | On-chip thermal testing using MOSFETs in weak inversion |
dc.type | Article |
dc.subject.lemac | Transistors d'efecte de camp de metall òxid semiconductor |
dc.subject.lemac | Transistors MESFET |
dc.contributor.group | Universitat Politècnica de Catalunya. e-CAT - Circuits i Transductors Electrònics |
dc.contributor.group | Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
dc.identifier.doi | 10.1109/TIM.2014.2341371 |
dc.description.peerreviewed | Peer Reviewed |
dc.rights.access | Open Access |
local.identifier.drac | 15452159 |
dc.description.version | Postprint (author's final draft) |
local.citation.author | Reverter, F.; Altet, J. |
local.citation.publicationName | IEEE transactions on instrumentation and measurement |
local.citation.volume | 64 |
local.citation.number | 2 |
local.citation.startingPage | 524 |
local.citation.endingPage | 532 |
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