Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon
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We demonstrate that n-type black silicon can be passivated efficiently using Atomic Layer Deposited (ALD) Al2O3, reaching maximum surface recombination velocities below 7 cm/s. We show that the low surface recombination velocity results from a higher sensitivity of the nanostructures to surface charge and from the absence of surface damage after black silicon etching. The surface recombination velocity is shown to be inversely proportional to the fourth power of the negative charge in contrast to the quadratic dependence observed in planar surfaces. This effect compensates the impact of the increased surface area in the nanostructures and extends the potential of black silicon for instance to n-type Interdigitated Back Contact (IBC) cells.
NOTICE: this is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, vol. 142, (November 2015) doi:10.1016/j.solmat.2015.05.027
Citacióvon Gastrow, G., Alcubilla, R., Ortega, P., Yli-Koski, M., Conesa-Boj, S., Fontcuberta i Morral, A., Savin, H. Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon. "Solar energy materials and solar cells", Novembre 2015, vol. 142, p. 29-33.