Simulación no líneal de transistores MESFET
Document typeConference report
Rights accessOpen Access
To design microwave transistor oscillators or power amplifiers a good non-linear characterization of the transistor is needed. This characterization can be obtained by measuring it on large signa! operation in a load-pull setup. This is a very time consuming method and dificult to implement, especially at millimeter wave frequencies, where good test fixtures are difficult to build. This paper describes a method to determine a non-linear model of MESFET transistors, based on experimental results. Using this non-linear model and by means of numerical methods, based on the harmonic balance mcthod, large signa! measurements can be simulated, thus allowing to easily obtain valuable design data.
CitationCorbella, I. Simulación no líneal de transistores MESFET. A: Simposium Nacional de la Unión Científica Internacional de Radio. "VI Simposium Nacional de la Unión Científica Internacional de Radio. URSI 1991". Caceres: 1991, p. 145-149.