L'objectiu global del grup de recerca és avançar en noves metodologies de disseny de circuits i sistemes electrònics i augmentar la seva qualitat, assegurant el funcionament correcte davant les variacions del procés i entorn i, fins i tot, davant atacs externs de maquinari. Els objectius de la investigació engloben tres dominis: el primer se centra en l'avanç de les tècniques de disseny de circuits de baixa potència i sistemes de tecnologies CMOS nanomètriques; el segon domini persegueix l'augment de la qualitat funcional, la innovació en els mètodes de control, auto-test i anàlisi d'integritat dels senyals analògics, digitals i de senyal mixt. Finalment, les estratègies de seguretat per la detecció contra atacs físics externs conformen el tercer objectiu de recerca del grup.

Enviaments recents

  • Quiescent current analysis and experimentation of defective CMOS circuits 

    Segura, J A; Champac, V H; Rodríguez Montañés, Rosa; Figueras Pàmies, Joan; Rubio Sola, Jose Antonio (1992-12)
    Article
    Accés restringit per política de l'editorial
    Physical defects widely encountered in today's CMOS processes (bridges, gate oxide short (gas) and floating gates) are modeled taking into account the topology of the defective circuit and the parameters of the technology. ...
  • Influence of punch trough stop layer and well depths on the robustness of bulk FinFETs to heavy ions impact 

    Calomarde Palomino, Antonio; Manich Bou, Salvador; Rubio Sola, Jose Antonio; Gamiz, Francisco (Institute of Electrical and Electronics Engineers (IEEE), 2022-05-02)
    Article
    Accés obert
    This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel. More than 1700 ...
  • Simulation of serial RRAM cell based on a Verilog-A compact model 

    Yang, Binbin; Arumi Delgado, Daniel; Manich Bou, Salvador; Gómez Pau, Álvaro; Rodríguez Montañés, Rosa; Bautista Roldan, Juan; Bargalló González, Mireia; Campabadal, Francesca; Fang, Liang (Institute of Electrical and Electronics Engineers (IEEE), 2021)
    Text en actes de congrés
    Accés restringit per política de l'editorial
    Model-based simulation is one of the effective methods of scientific research. The inherent variability of resistive switching mechanisms has been an obstacle for the massive commercial implementation of the resistive ...
  • Low Cost AES Protection Against DPA Using Rolling Codes 

    Albiol Perarnau, Pau; Manich Bou, Salvador; Arumi Delgado, Daniel; Rodríguez Montañés, Rosa; Gómez-Pau, Álvaro (Curran Associates, Inc., 2021)
    Text en actes de congrés
    Accés restringit per política de l'editorial
    Many block cipher algorithms like AES are known to be weak against differential power analysis attacks (DPA) if the executing unit presents certain levels of information leakage, which is a common problem in microprocessors. ...
  • On-line remaining useful life estimation of power connectors focused on predictive maintenance 

    Riba Ruiz, Jordi-Roger; Gómez Pau, Álvaro; Martínez Reyes, Jimmy Arturo; Moreno Eguilaz, Juan Manuel (Multidisciplinary Digital Publishing Institute (MDPI), 2021-05-27)
    Article
    Accés obert
    Connections are critical elements in power systems, exhibiting higher failure probability. Power connectors are considered secondary simple devices in power systems despite their key role, since a failure in one such element ...
  • RRAM random number generator based on train of pulses 

    Yang, Binbin; Arumi Delgado, Daniel; Manich Bou, Salvador; Gómez Pau, Álvaro; Rodríguez Montañés, Rosa; Bargalló González, Mireia; Campabadal, Francesca; Fang, Liang (2021-07-30)
    Article
    Accés obert
    In this paper, the modulation of the conductance levels of resistive random access memory (RRAM) devices is used for the generation of random numbers by applying a train of RESET pulses. The influence of the pulse amplitude ...
  • Serial RRAM cell for secure bit concealing 

    Yang, Binbin; Arumi Delgado, Daniel; Manich Bou, Salvador; Gómez Pau, Álvaro; Rodríguez Montañés, Rosa; Bargalló González, Mireia; Campabadal, Francesca; Fang, Liang (2021-07-31)
    Article
    Accés obert
    Non-volatile memory cells are exposed to adversary attacks since any active countermeasure is useless when the device is powered off. In this context, this work proposes the association of two serial RRAM devices as a basic ...
  • Enhanced serial RRAM cell for unpredictable bit generation 

    Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Gómez-Pau, Álvaro; Manich Bou, Salvador; Bargalló González, Mireia; Campabadal, Francesca (2021-05)
    Article
    Accés obert
    In this letter, the serial configuration of two RRAMs is used as a basic cell to generate an unpredictable bit. The basis of the operation considers starting from the Low Resistive State (LRS) in both devices (initialization ...
  • Indirect and adaptive test of analogue circuits based on preselected steady-state response measures 

    Gómez Pau, Álvaro; Lupón Roses, Emilio; Balado Suárez, Luz María; Figueras, Joan (2020-08-01)
    Article
    Accés obert
    Alternate testing techniques have been progressively adopted as a promising solution due to their effectiveness against classical specification-based test methods. This work presents a built-in test system, which adaptively ...
  • A forming-free ReRAM cell with low operating voltage 

    Yang, Binbin; Xu, Nuo; Li, Cheng; Huang, Chenglong; Ma, Desheng; Liu, Jiahao; Arumi Delgado, Daniel; Fang, Liang (2020-11-25)
    Article
    Accés obert
    The unwanted electro-forming process is unavoidable for the practical application of most resistive random access memory (ReRAM) devices, which is always being one of the obstacles for the massive commercialization of this ...
  • Sensor comparison for corona discharge detection under low pressure conditions 

    Riba Ruiz, Jordi-Roger; Gómez Pau, Álvaro; Moreno Eguilaz, Juan Manuel (2020-06-01)
    Article
    Accés obert
    Low pressure environments, situate insulation systems in a challenging position since partial discharges (PDs), corona and arc tracking are more likely to develop. Therefore, specific solutions are required to detect such ...
  • Uprating of transmission lines by means of HTLS conductors for a sustainable growth: challenges, opportunities, and research needs 

    Riba Ruiz, Jordi-Roger; Bogarra Rodríguez, Santiago; Gómez Pau, Álvaro; Moreno Eguilaz, Juan Manuel (2020-12-01)
    Article
    Accés obert
    This paper provides a comprehensive and critical review and evaluation of the technological state-of-the-art of high-temperature low-sag (HTLS) conductors by analyzing research articles, theses, reports, white papers and ...

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