Metal-insulator-semiconductor heterostructures for plasmonic hot-carrier optoelectronics
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Inclou dades d'ús des de 2022
Cita com:
hdl:2117/76502
Tipus de documentArticle
Data publicació2015-06-01
EditorOSA
Condicions d'accésAccés obert
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Reconeixement-NoComercial-SenseObraDerivada 3.0 Espanya
Abstract
Plasmonic hot-electron devices are attractive candidates for
light-energy harvesting and photodetection applications. For solid state
devices, the most compact and straightforward architecture is the metalsemiconductor
Schottky junction. However convenient, this structure
introduces limitations such as the elevated dark current associated to
thermionic emission, or constraints for device design due to the finite
choice of materials. In this work we theoretically consider the metalinsulator-semiconductor
heterojunction as a candidate for plasmonic hotcarrier
photodetection and solar cells. The presence of the insulating layer
can significantly reduce the dark current, resulting in increased device
performance with predicted solar power conversion efficiencies up to 9%.
For photodetection, the sensitivity can be extended well into the infrared by
a judicious choice of the insulating layer, with up to 300-fold expected
enhancement in detectivity.
ISSN1094-4087
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oe-23-11-14715.pdf | 2,057Mb | Visualitza/Obre |