Mostra el registre d'ítem simple
HOMO stabilisation in pi-Extended Dibenzotetrathiafulvalene derivatives for their application in OFETs
dc.contributor.author | Geng, Yan |
dc.contributor.author | Pfattner, Raphael |
dc.contributor.author | Campos García, Antonio |
dc.contributor.author | Wang, Wei |
dc.contributor.author | Jeannin, Olivier |
dc.contributor.author | Hauser, Jürg |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Bromley, Stefan T. |
dc.contributor.author | Decurtins, Silvio |
dc.contributor.author | Veciana Miró, Jaume |
dc.contributor.author | Rovira Angulo, Concepció |
dc.contributor.author | Mas Torrent, Marta |
dc.contributor.author | Liu, Shixia |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2015-07-17T14:41:54Z |
dc.date.created | 2014-05-15 |
dc.date.issued | 2014-05-15 |
dc.identifier.citation | Geng, Y., Pfattner, R., Campos, A., Wang, W., Jeannin, O., Hauser, J., Puigdollers, J., Bromley, S., Decurtins, S., Veciana, J., Rovira, C., Mas, M., Liu, S. HOMO stabilisation in pi-Extended Dibenzotetrathiafulvalene derivatives for their application in OFETs. "Chemistry. A European Journal", 15 Maig 2014, núm. 50, p. 16672-16679. |
dc.identifier.uri | http://hdl.handle.net/2117/76200 |
dc.description.abstract | Three new organic semiconductors, in which either two methoxy units are directly linked to a dibenzotetrathiafulvalene (DB-TTF) central core and a 2,1,3-chalcogendiazole is fused on the one side, or four methoxy groups are linked to the DB-TTF, have been synthesised as active materials for organic field-effect transistors (OFETs). Their electrochemical behaviour, electronic absorption and fluorescence emission as well as photoinduced intramolecular charge transfer were studied. The electron-withdrawing 2,1,3-chalcogendiazole unit significantly affects the electronic properties of these semiconductors, lowering both the HOMO and LUMO energy levels and hence increasing the stability of the semiconducting material. The solution-processed single-crystal transistors exhibit high performance with a hole mobility up to 0.04 cm2¿V-1¿s-1 as well as good ambient stability. |
dc.format.extent | 8 p. |
dc.language.iso | eng |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Enginyeria química |
dc.subject.lcsh | Semiconductors |
dc.subject.other | Donor–acceptor systems |
dc.subject.other | Fused-ring systems |
dc.subject.other | Molecular electronics |
dc.subject.other | Semiconductors |
dc.subject.other | Thin films |
dc.title | HOMO stabilisation in pi-Extended Dibenzotetrathiafulvalene derivatives for their application in OFETs |
dc.type | Article |
dc.subject.lemac | Semiconductors |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1002/chem.201404508 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://onlinelibrary.wiley.com/doi/10.1002/chem.201404508/abstract |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 16634754 |
dc.description.version | Postprint (published version) |
dc.date.lift | 10000-01-01 |
local.citation.author | Geng, Y.; Pfattner, R.; Campos, A.; Wang, W.; Jeannin, O.; Hauser, J.; Puigdollers, J.; Bromley, S.; Decurtins, S.; Veciana, J.; Rovira, C.; Mas, M.; Liu, S. |
local.citation.publicationName | Chemistry. A European Journal |
local.citation.volume | 20 |
local.citation.number | 50 |
local.citation.startingPage | 16672 |
local.citation.endingPage | 16679 |
Fitxers d'aquest items
Aquest ítem apareix a les col·leccions següents
-
Articles de revista [346]
-
Articles de revista [1.728]