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dc.contributor.authorGeng, Yan
dc.contributor.authorPfattner, Raphael
dc.contributor.authorCampos García, Antonio
dc.contributor.authorWang, Wei
dc.contributor.authorJeannin, Olivier
dc.contributor.authorHauser, Jürg
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorBromley, Stefan T.
dc.contributor.authorDecurtins, Silvio
dc.contributor.authorVeciana Miró, Jaume
dc.contributor.authorRovira Angulo, Concepció
dc.contributor.authorMas Torrent, Marta
dc.contributor.authorLiu, Shixia
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2015-07-17T14:41:54Z
dc.date.created2014-05-15
dc.date.issued2014-05-15
dc.identifier.citationGeng, Y., Pfattner, R., Campos, A., Wang, W., Jeannin, O., Hauser, J., Puigdollers, J., Bromley, S., Decurtins, S., Veciana, J., Rovira, C., Mas, M., Liu, S. HOMO stabilisation in pi-Extended Dibenzotetrathiafulvalene derivatives for their application in OFETs. "Chemistry. A European Journal", 15 Maig 2014, núm. 50, p. 16672-16679.
dc.identifier.urihttp://hdl.handle.net/2117/76200
dc.description.abstractThree new organic semiconductors, in which either two methoxy units are directly linked to a dibenzotetrathiafulvalene (DB-TTF) central core and a 2,1,3-chalcogendiazole is fused on the one side, or four methoxy groups are linked to the DB-TTF, have been synthesised as active materials for organic field-effect transistors (OFETs). Their electrochemical behaviour, electronic absorption and fluorescence emission as well as photoinduced intramolecular charge transfer were studied. The electron-withdrawing 2,1,3-chalcogendiazole unit significantly affects the electronic properties of these semiconductors, lowering both the HOMO and LUMO energy levels and hence increasing the stability of the semiconducting material. The solution-processed single-crystal transistors exhibit high performance with a hole mobility up to 0.04 cm2¿V-1¿s-1 as well as good ambient stability.
dc.format.extent8 p.
dc.language.isoeng
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria química
dc.subject.lcshSemiconductors
dc.subject.otherDonor–acceptor systems
dc.subject.otherFused-ring systems
dc.subject.otherMolecular electronics
dc.subject.otherSemiconductors
dc.subject.otherThin films
dc.titleHOMO stabilisation in pi-Extended Dibenzotetrathiafulvalene derivatives for their application in OFETs
dc.typeArticle
dc.subject.lemacSemiconductors
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1002/chem.201404508
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://onlinelibrary.wiley.com/doi/10.1002/chem.201404508/abstract
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac16634754
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorGeng, Y.; Pfattner, R.; Campos, A.; Wang, W.; Jeannin, O.; Hauser, J.; Puigdollers, J.; Bromley, S.; Decurtins, S.; Veciana, J.; Rovira, C.; Mas, M.; Liu, S.
local.citation.publicationNameChemistry. A European Journal
local.citation.volume20
local.citation.number50
local.citation.startingPage16672
local.citation.endingPage16679


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