Mostra el registre d'ítem simple
Study of emitter width effects on beta(F), f(T) and f(max) of 200 GHz SiGe HBTs by DD, HD and EB device simulation
dc.contributor.author | López González, Juan Miguel |
dc.contributor.author | Schröter, Michael |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2010-06-01T15:05:28Z |
dc.date.available | 2010-06-01T15:05:28Z |
dc.date.created | 2009-09 |
dc.date.issued | 2009-09 |
dc.identifier.citation | Lopez, J.; Schröter, M. Study of emitter width effects on beta(F), f(T) and f(max) of 200 GHz SiGe HBTs by DD, HD and EB device simulation. "Semiconductor science and technology", Setembre 2009, vol. 24, núm. 11, p. 5005-5012. |
dc.identifier.issn | 0268-1242 |
dc.identifier.uri | http://hdl.handle.net/2117/7470 |
dc.description.abstract | This paper studies the effect of emitter width on the dc current gain, βF , and ac figures of merit, cut-off frequency, f T, and maximum oscillation frequency, f max, of realistic structures for 200 GHz SiGe heterojunction bipolar transistors (HBTs) using two-dimensional drift-diffusion (DD), hydrodynamic (HD) and energy balance (EB) simulations. The carrier transport models used are briefly presented. The SiGe-HBTs studied have a base thickness of 15 nm. Results of the three transport models are shown and analyzed, for the different emitter geometries. |
dc.format.extent | 8 p. |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica |
dc.subject | Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors |
dc.subject.lcsh | Semiconductors |
dc.title | Study of emitter width effects on beta(F), f(T) and f(max) of 200 GHz SiGe HBTs by DD, HD and EB device simulation |
dc.type | Article |
dc.subject.lemac | Electrònica |
dc.subject.lemac | Semiconductors |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1088/0268-1242/24/11/115005 |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 2046147 |
dc.description.version | Postprint (published version) |
local.citation.author | Lopez, J.; Schröter, M. |
local.citation.publicationName | Semiconductor science and technology |
local.citation.volume | 24 |
local.citation.number | 11 |
local.citation.startingPage | 5005 |
local.citation.endingPage | 5012 |
Fitxers d'aquest items
Aquest ítem apareix a les col·leccions següents
-
Articles de revista [346]
-
Articles de revista [1.724]