A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based on the determination of its intrinsic noise matrix elements (C11INT, C22INT, Re(C12INT), Im(C12INT)) by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources.
CitationLazaro, A.; Pradell, L.; Beltran, A.; O'Callaghan, J.M. Direct extraction of all four transistor noise parameters from 50 Ω noise figure measurements. Electronics Letters, 1998, vol.34, núm.3, p.289-291. ISSN:0013-5194
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