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In this paper the Electromagnetic Robustness (EMR) of a CMOS inverter has been analyzed when the pFETs are submitted to negative bias temperature instability (NBTI). The impact of pFET and CMOS inverter has been experimentally quantified and the switching noise and electromagnetic susceptibility has been analyzed by means of simulation. The results show that NBTI reduces the switching noise whereas the EMI susceptibility is not modified.
CitationFernandez, R. [et al.]. Impact of NBTI on EMC behaviours of CMOS inverter. A: Asia-Pacific International Symposium on Electromagnetic Compatibility- EMC-ZURICH. "Proceedings of the Asia-Pacific International Symposium on Electromagnetic Compatibility- EMC-ZURICH". 2010, p. 1031-1034.
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