A novel method for measuring the four noise parameters of a field-effect transistor (FET) is presented. It is based on the determination of its intrinsic noise matrix elements [C11INT, C22INT, Re(C12 INT), Im(C12INT)] by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points, thus, a tuner is not required. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources. The receiver full-noise calibration is easily performed by using a set of coaxial and on-wafer standards that are commonly available in a microwave laboratory, thus, an expensive broad-band tuner is not required for calibration either. On-wafer experimental verification up to 26 GHz is presented and a comparison with other F50-based and tuner-based methods is given. As an application, the dependence of the FET intrinsic noise sources as a function of the bias drain-current and gate-length is obtained.
CitationLazaro, A.; Pradell, L.; O'Callaghan, J.M. FET noise-parameter determination using a novel technique based on 50-Ω noise-figure measurements. IEEE Transactions on microwave theory and techniques, 1999, vol.47, issue 3, p. 315-324
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder. If you wish to make any use of the work not provided for in the law, please contact: firstname.lastname@example.org