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dc.contributor.authorOrpella García, Alberto
dc.contributor.authorBlanqué, Servane
dc.contributor.authorRoiati, V.
dc.contributor.authorMartín García, Isidro
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2010-03-19T15:08:10Z
dc.date.available2010-03-19T15:08:10Z
dc.date.created2009-02-11
dc.date.issued2009-02-11
dc.identifier.citationOrpella, A. [et al.]. N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks. A: Spanish Conference on Electronics Devices. "7th Spanish Conference on Electronic Devices". Santiago de Compostela: IEEE Press. Institute of Electrical and Electronics Engineers, 2009, p. 357-359.
dc.identifier.isbn978-1-4244-2839-7
dc.identifier.urihttp://hdl.handle.net/2117/6718
dc.description.abstractThis paper studies the passivation of industrially textured deep silicon emitters using amorphous silicon carbonitride layers in stack configuration, deposited by plasma enhanced chemical vapor deposition. With this technique, emitter saturation current density can be decreased to values around 250 fA middot cm-2. As a consequence, open circuit voltages can be increased 25 mV achieving values around 640 mV.
dc.format.extent3 p.
dc.language.isoeng
dc.publisherIEEE Press. Institute of Electrical and Electronics Engineers
dc.subjectÀrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar tèrmica::Plaques solars
dc.subject.lcshSolar cells
dc.subject.lcshSilicon polymers
dc.titleN-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks
dc.typeConference report
dc.subject.lemacEnergia solar
dc.subject.lemacSilici
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1109/SCED.2009.4800506
dc.identifier.dlIEEE
dc.rights.accessOpen Access
local.identifier.drac2415899
dc.description.versionPostprint (published version)
local.citation.authorOrpella, A.; Blanqué, S.; Roiati, V.; Martin, I.; Voz, C.; Puigdollers, J.; Alcubilla, R.
local.citation.contributorSpanish Conference on Electronics Devices
local.citation.pubplaceSantiago de Compostela
local.citation.publicationName7th Spanish Conference on Electronic Devices
local.citation.startingPage357
local.citation.endingPage359


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