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N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Blanqué, Servane |
dc.contributor.author | Roiati, V. |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2010-03-19T15:08:10Z |
dc.date.available | 2010-03-19T15:08:10Z |
dc.date.created | 2009-02-11 |
dc.date.issued | 2009-02-11 |
dc.identifier.citation | Orpella, A. [et al.]. N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks. A: Spanish Conference on Electronics Devices. "7th Spanish Conference on Electronic Devices". Santiago de Compostela: IEEE Press. Institute of Electrical and Electronics Engineers, 2009, p. 357-359. |
dc.identifier.isbn | 978-1-4244-2839-7 |
dc.identifier.uri | http://hdl.handle.net/2117/6718 |
dc.description.abstract | This paper studies the passivation of industrially textured deep silicon emitters using amorphous silicon carbonitride layers in stack configuration, deposited by plasma enhanced chemical vapor deposition. With this technique, emitter saturation current density can be decreased to values around 250 fA middot cm-2. As a consequence, open circuit voltages can be increased 25 mV achieving values around 640 mV. |
dc.format.extent | 3 p. |
dc.language.iso | eng |
dc.publisher | IEEE Press. Institute of Electrical and Electronics Engineers |
dc.subject | Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar tèrmica::Plaques solars |
dc.subject.lcsh | Solar cells |
dc.subject.lcsh | Silicon polymers |
dc.title | N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks |
dc.type | Conference report |
dc.subject.lemac | Energia solar |
dc.subject.lemac | Silici |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1109/SCED.2009.4800506 |
dc.identifier.dl | IEEE |
dc.rights.access | Open Access |
local.identifier.drac | 2415899 |
dc.description.version | Postprint (published version) |
local.citation.author | Orpella, A.; Blanqué, S.; Roiati, V.; Martin, I.; Voz, C.; Puigdollers, J.; Alcubilla, R. |
local.citation.contributor | Spanish Conference on Electronics Devices |
local.citation.pubplace | Santiago de Compostela |
local.citation.publicationName | 7th Spanish Conference on Electronic Devices |
local.citation.startingPage | 357 |
local.citation.endingPage | 359 |