PublisherIEEE Press. Institute of Electrical and Electronics Engineers
Rights accessOpen Access
This paper studies the passivation of industrially textured deep silicon emitters using amorphous silicon carbonitride layers in stack configuration, deposited by plasma enhanced chemical vapor deposition. With this technique, emitter saturation current density can be decreased to values around 250 fA middot cm-2. As a consequence, open circuit voltages can be increased 25 mV achieving values around 640 mV.
CitationOrpella, A. [et al.]. N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks. A: Spanish Conference on Electronics Devices. "7th Spanish Conference on Electronic Devices". Santiago de Compostela: IEEE Press. Institute of Electrical and Electronics Engineers, 2009, p. 357-359.
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