PublisherIEEE Press. Institute of Electrical and Electronics Engineers
Rights accessOpen Access
Some sputtering processes of GaAs and Ti onto
glass, c-Si and c-GaAs substrates have been carried out in order
to obtain thin films as candidates to be intermediate band
photovoltaic materials. This work presents first results
concerning the optical and structural properties of the different
deposited thin films.
CitationSilvestre, S. [et al.]. Analysis of GaAs-Ti thin films deposited by sputtering onto c-Si and GaAs. A: 7th Spanish Conference on Electronics Devices. "7th Spanish Conference on Electronic Devices". Santiago de Compostela: IEEE Press. Institute of Electrical and Electronics Engineers, 2009, p. 5-7.
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder. If you wish to make any use of the work not provided for in the law, please contact: firstname.lastname@example.org