Articles de revista: Enviaments recents
Ara es mostren els items 1-12 de 92
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FastIC: a fast integrated circuit for the readout of high performance detectors
(2022-05-01)
Article
Accés obertThis work presents the 8-channel FastIC ASIC developed in CMOS 65¿nm technology suitable for the readout of positive and negative polarity sensors in high energy physics experiments, Cherenkov detectors and time-of-flight ... -
Design and implementation of a 5/spl times/5 trits multiplier in a quasi-adiabatic ternary CMOS logic
(1998-07)
Article
Accés obertAdiabatic switching is a technique to design low-power digital IC's. Fully adiabatic logics have expensive silicon area requirements. To solve this drawback, a quasi-adiabatic ternary logic is proposed. Its basis is ... -
Influence of punch trough stop layer and well depths on the robustness of bulk FinFETs to heavy ions impact
(Institute of Electrical and Electronics Engineers (IEEE), 2022-05-02)
Article
Accés obertThis study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel. More than 1700 ... -
CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging
(2022-05-01)
Article
Accés restringit per política de l'editorialIn this work, CMOS inverters are subjected to electrical stress emulating a complete operation cycle and the shifts in the performance parameters (i.e., peak current and inversion voltage) evaluated. Moreover, degradation ... -
A 3–5-GHz, 385–540-ps CMOS true time delay element for ultra-wideband antenna arrays
(Elsevier, 2022-05-01)
Article
Accés restringit per política de l'editorialThis paper proposes an all-pass filter-based true time delay (TTD) element covering a 3–5-GHz ultra-wideband (UWB) frequency. The proposed TTD element designed in a standard 0.18-µm CMOS technology achieves a tunable delay ... -
Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements
(2021-10-01)
Article
Accés obertIn this work, an ‘on-the-fly’ measurement technique for the monitoring of CMOS inverters performance degradation is presented. This technique allows the characterization of the circuit degradation simultaneously with the ... -
Analysis of random body bias application in FDSOI cryptosystems as a countermeasure to leakage-based power analysis attacks
(Institute of Electrical and Electronics Engineers (IEEE), 2021)
Article
Accés obertThis paper analyses a novel countermeasure to Leakage Power Analysis Attacks based on the application of a random Body Bias voltage level at the beginning of the encryption process. The countermeasure effectiveness is ... -
Current balancing random body bias in FDSOI cryptosystems as a countermeasure to leakage power analysis attacks
(Institute of Electrical and Electronics Engineers (IEEE), 2022)
Article
Accés obertThis paper identifies vulnerabilities to recently proposed countermeasures to leakage power analysis attacks in FDSOI systems based on the application of a random body bias. The vulnerabilities are analyzed and the relative ... -
BPF-based thermal sensor circuit for on-chip testing of RF circuits
(Multidisciplinary Digital Publishing Institute (MDPI), 2021-01)
Article
Accés obertA new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 µm complementary metal-oxide-semiconductor (CMOS) ... -
Electronic properties of graphene nanoribbons with defects
(2021-01-27)
Article
Accés obertGraphene nanoribbons (GNRs) are the most important emerging Graphene structures for nanoelectronic and sensor applications. GNRs with perfect lattices have been extensively studied, but fabricated GNRs contain lattice ... -
Alternative memristor-based interconnect topologies for fast adaptive synchronization of chaotic circuits
(2020-09)
Article
Accés obertResistive switching devices (memristors) constitute an emerging device technology promising for a vari- ety of applications that are currently being studied. In this context, the use of memristors as coupling el- ements ... -
Aging in CMOS RF linear power amplifiers: an experimental study
(IEEE Microwave Theory and Techniques Society, 2021-02-01)
Article
Accés obertAn extensive experimental analysis of the hot carrier injection (HCI) and bias temperature instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article. Two different 2.45-GHz PA topologies ...
