Enviaments recents

  • Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation 

    Rana, Manish; Canal Corretger, Ramon; Amat Bertran, Esteve; Rubio Sola, Jose Antonio (2017-03-01)
    Article
    Accés obert
    Bio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, ...
  • Insights into tunnel FET-based charge pumps and rectifiers for energy harvesting applications 

    Nunes Cavalheiro, David Manuel; Moll Echeto, Francisco de Borja; Valtchev, Stanimir (2017-03-01)
    Article
    Accés obert
    In this paper, the electrical characteristics of tunnel field-effect transistor (TFET) devices are explored for energy harvesting front-end circuits with ultralow power consumption. Compared with conventional thermionic ...
  • Thermal phase lag heterodyne infrared imaging for current tracking in radio frequency integrated circuits 

    Perpiñà Gilabet, Xavier; León, Javier; Altet Sanahujes, Josep; Vellvehi, Miquel; Reverter Cubarsí, Ferran; Barajas Ojeda, Enrique; Jordà, Xavier (2017-02-27)
    Article
    Accés restringit per política de l'editorial
    With thermal phase lag measurements, current paths are tracked in a Class A radio frequency (RF) power amplifier at 2 GHz. The amplifier is heterodynally driven at 440 MHz and 2 GHz, and its resulting thermal field was ...
  • MOSFET dynamic thermal sensor for IC testing applications 

    Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Barajas Ojeda, Enrique; León, Javier; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2016-05-01)
    Article
    Accés restringit per política de l'editorial
    This paper analyses how a single metal-oxide-semiconductor field-effect transistor (MOSFET) can be employed as a thermal sensor to measure on-chip dynamic thermal signals caused by a power-dissipating circuit under test ...
  • Memristive crossbar memory lifetime evaluation and reconfiguration strategies 

    Pouman, Peyman; Amat, Esteve; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2016-06-20)
    Article
    Accés obert
    Among the emerging technologies and devices for highly scalable and low power memory architectures, memristors are considered as one of the most favorable alternatives for next generation memory technologies. They are ...
  • Self-calibrating closed-loop circuit for configurable constant voltage thermal anemometers 

    Gorreta Mariné, Sergio; Barajas Ojeda, Enrique; Kowalski, Lukasz; Atienza García, María Teresa; Domínguez Pumar, Manuel; Jimenez Serres, Vicente (Institution of Electrical Engineers, 2015-09-17)
    Article
    Accés obert
    A new circuit is described which applies a configurable voltage across an RTD while the current flowing through it is measured with a current mirror. The circuit also allows working with voltages above the IC supply voltage ...
  • A self-calibrating closed loop circuit for configurable constant voltage thermal anemometers 

    Gorreta Mariné, Sergio; Barajas Ojeda, Enrique; Kowalski, Lukasz; Atienza García, María Teresa; Domínguez Pumar, Manuel; Jimenez Serres, Vicente (Institution of Electrical Engineers, 2015-09-17)
    Article
    Accés obert
  • On-chip thermal testing using MOSFETs in weak inversion 

    Reverter Cubarsí, Ferran; Altet Sanahujes, Josep (2015-02-01)
    Article
    Accés obert
    This paper analyzes the feasibility of using metal-oxide-semiconductor field-effect transistors (MOSFETs) operating in weak inversion as temperature sensors for on-chip thermal testing applications. MOSFETs in weak inversion ...
  • DC temperature measurements to characterize the central frequency and 3 dB bandwidth in mmW power amplifiers 

    Aragonès Cervera, Xavier; Mateo Peña, Diego; González Jiménez, José Luis; Vidal López, Eva María; Gómez Salinas, Didac; Martineau, B; Altet Sanahujes, Josep (2015-11)
    Article
    Accés obert
    This letter shows how a temperature sensor and a simple DC voltage multimeter can be used as instruments to determine the central frequency and 3 dB bandwidth of a 60 GHz linear power amplifier (PA). Compared to previous ...
  • Radio-Frequency Performance of Carbon Nanotube-Based Devices and Circuits Considering Noise and Process Variation 

    Landauer, Gerhard Martin; Gonzalez Jimenez, Jose Luis (2014-03-01)
    Article
    Accés restringit per política de l'editorial
    This paper provides a global overview of the radiofrequency (RF) performance potential of carbon-nanotube field-effect transistors (CNFET), which for the first time includes the impact of noise. We develop noise and ...

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