Enviaments recents

  • MOSFET degradation dependence on input signal power in a RF power amplifier 

    Crespo Yepes, Albert; Barajas Ojeda, Enrique; Martin Martínez, Javier; Mateo Peña, Diego; Aragonès Cervera, Xavier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2017-06-25)
    Article
    Accés obert
    Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ...
  • Via-configurable transistors array: a regular design technique to improve ICs yield 

    Pons, Marc; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Abella Ferrer, Jaume; Vera Rivera, Francisco Javier; González Colás, Antonio María (Institute of Electrical and Electronics Engineers (IEEE), 2007)
    Text en actes de congrés
    Accés obert
    Process variations are a major bottleneck for digital CMOS integrated circuits manufacturability and yield. That is why regular techniques with different degrees of regularity are emerging as possible solutions. Our ...
  • TFET-Based power management circuit for RF energy harvesting 

    Nunes Cavalheiro, David Manuel; Moll Echeto, Francisco de Borja; Valtchev, Stanimir (2016-11-14)
    Article
    Accés obert
    This paper proposes a Tunnel FET (TFET)-based power management circuit (PMC) for ultra-low power RF energy harvesting applications. In contrast with conventional thermionic devices, the band-to-band tunneling mechanism of ...
  • Heterogeneous memristive crossbar for in-memory computing 

    Papandroulidakis, Georgios; Vourkas, Ioanis; Sirakoulis, Georgios Ch.; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2015)
    Text en actes de congrés
    Accés obert
    It's been quite a while since scientists are seeking for the ancestor of von Neumann computing architecture. Among the most promising candidates, memristor demonstrates advantageous characteristics, which open new pathways ...
  • Insights to memristive memory cell from a reliability perspective 

    Pouyan, Peyman; Amat Bertran, Esteve; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2015)
    Text en actes de congrés
    Accés obert
    The scaling roadmap of devices under a more than Moore scenario is resulting in the emergence of new types of devices. Among them, memristors seem to be promising candidates to be suitable for various areas of application ...
  • 1-D memristor networks as ternary storage cells 

    Vourkas, Ioannis; Abusleme, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2016)
    Text en actes de congrés
    Accés restringit per política de l'editorial
    Due to its inherent analog nature, the memristor can store information in a continuous form, being thus well-suited for compact multi-bit memory cell technology. In this context, threshold-type switching devices show great ...
  • Crossbar-based memristive logic-in-memory architecture 

    Papandroulikadis, Georgios; Vourkas, Ioannis; Abustelema, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (2017-04-01)
    Article
    Accés obert
    The use of memristors and resistive random access memory (ReRAM) technology to perform logic computations, has drawn considerable attention from researchers in recent years. However, the topological aspects of the ...
  • RRAM variability and its mitigation schemes 

    Pouman, Peyman; Amat, Esteve; Hamdioui, Said; Rubio Sola, Jose Antonio (2016)
    Text en actes de congrés
    Accés obert
    Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories. ...
  • Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation 

    Rana, Manish; Canal Corretger, Ramon; Amat Bertran, Esteve; Rubio Sola, Jose Antonio (2017-03-01)
    Article
    Accés obert
    Bio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, ...
  • Insights into tunnel FET-based charge pumps and rectifiers for energy harvesting applications 

    Nunes Cavalheiro, David Manuel; Moll Echeto, Francisco de Borja; Valtchev, Stanimir (2017-03-01)
    Article
    Accés obert
    In this paper, the electrical characteristics of tunnel field-effect transistor (TFET) devices are explored for energy harvesting front-end circuits with ultralow power consumption. Compared with conventional thermionic ...

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