Enviaments recents

  • Differential temperature sensor with high sensitivity, wide dynamic range and digital offset calibration 

    Vidal López, Eva María; Ruiz Cayuela, Sergio; Duquenoy, Jérémy; González, J. L.; Altet Sanahujes, Josep (2017-08-15)
    Article
    Accés restringit per política de l'editorial
    The goal of this paper is twofold: first to add together all different causes that can alter the offset of a differential temperature sensor and, second, to present a new differential temperature sensor architecture that ...
  • Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations 

    Barajas Ojeda, Enrique; Mateo Peña, Diego; Aragonès Cervera, Xavier; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2017)
    Text en actes de congrés
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    This paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation ...
  • Exploring the voltage divider approach for accurate memristor state tuning 

    Vourkas, Ioannis; Gomez, Jorge; Abusleme, Angel; Vasileiadis, Nikolaos; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
    Text en actes de congrés
    Accés restringit per política de l'editorial
    The maximum exploitation of the favorable properties and the analog nature of memristor technology in future nonvolatile resistive memories, requires accurate multilevel programming. In this direction, we explore the voltage ...
  • Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells 

    Martinez, Javier; Rodriguez, Rosa; Nafria, Montse; Torrents, Gabriel; Bota, Sebastian A .; Segura, Jaume; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
    Text en actes de congrés
    Accés restringit per política de l'editorial
    Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is ...
  • MOSFET degradation dependence on input signal power in a RF power amplifier 

    Crespo Yepes, Albert; Barajas Ojeda, Enrique; Martin Martínez, Javier; Mateo Peña, Diego; Aragonès Cervera, Xavier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2017-06-25)
    Article
    Accés obert
    Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ...
  • Via-configurable transistors array: a regular design technique to improve ICs yield 

    Pons, Marc; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Abella Ferrer, Jaume; Vera Rivera, Francisco Javier; González Colás, Antonio María (Institute of Electrical and Electronics Engineers (IEEE), 2007)
    Text en actes de congrés
    Accés obert
    Process variations are a major bottleneck for digital CMOS integrated circuits manufacturability and yield. That is why regular techniques with different degrees of regularity are emerging as possible solutions. Our ...
  • TFET-Based power management circuit for RF energy harvesting 

    Nunes Cavalheiro, David Manuel; Moll Echeto, Francisco de Borja; Valtchev, Stanimir (2016-11-14)
    Article
    Accés obert
    This paper proposes a Tunnel FET (TFET)-based power management circuit (PMC) for ultra-low power RF energy harvesting applications. In contrast with conventional thermionic devices, the band-to-band tunneling mechanism of ...
  • Heterogeneous memristive crossbar for in-memory computing 

    Papandroulidakis, Georgios; Vourkas, Ioanis; Sirakoulis, Georgios Ch.; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2015)
    Text en actes de congrés
    Accés obert
    It's been quite a while since scientists are seeking for the ancestor of von Neumann computing architecture. Among the most promising candidates, memristor demonstrates advantageous characteristics, which open new pathways ...
  • Insights to memristive memory cell from a reliability perspective 

    Pouyan, Peyman; Amat Bertran, Esteve; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2015)
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    Accés obert
    The scaling roadmap of devices under a more than Moore scenario is resulting in the emergence of new types of devices. Among them, memristors seem to be promising candidates to be suitable for various areas of application ...
  • 1-D memristor networks as ternary storage cells 

    Vourkas, Ioannis; Abusleme, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2016)
    Text en actes de congrés
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    Due to its inherent analog nature, the memristor can store information in a continuous form, being thus well-suited for compact multi-bit memory cell technology. In this context, threshold-type switching devices show great ...

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