El grup consta de 20 membres doctors. Es un grup de llarga trajectòria l’activitat del qual es centra en el desenvolupament i fabricació de dispositius semiconductors. Per això disposa d’un laboratori de fabricació “Sala Blanca” que constitueix un element vertebrador de l’activitat del grup. En particular la recerca es centra en les cèl•lules solars fotovoltaiques i en el desenvolupament de tecnologies de fabricació més econòmiques: tecnologia laser per cèl•lules solars de Silici, fabricació de cèl•lules HIT ( Heterojunction with thin Intrinsec layer ) , IBC (Intedigitated Back Contact), capes de passivació, cèl•lules orgàniques, termofotovoltaic. Un altre focus d’activitat son els cristalls fotònics 3D ja sia en Sililci com col•loïdals i tecnologies de manipulació de líquids a escala micromètrica.

http://futur.upc.edu/MNT

Research in micro and nanotechnology devices and their application in microelectronics, MEMSs, photonics and photovoltaic solar energy.

http://futur.upc.edu/MNT

Research in micro and nanotechnology devices and their application in microelectronics, MEMSs, photonics and photovoltaic solar energy.

http://futur.upc.edu/MNT

Enviaments recents

  • Al2O3/TiO2 inverse opals from electrosprayed self-assembled templates 

    Coll, Arnau; Bermejo Broto, Sandra; Hernández, David; Castañer Muñoz, Luis María (2018-01-19)
    Article
    Accés obert
    The fabrication of high optical quality inverse opals is challenging, requiring large size, three-dimensional ordered layers of high dielectric constant ratio. In this article, alumina/TiO2–air inverse opals with a 98.2% ...
  • Pentacene thin-films obtained by thermal evaporation in high vacuum 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Vetter, Michael; Alcubilla González, Ramón (2003-03)
    Article
    Accés restringit per política de l'editorial
    Pentacene thin-films were obtained by thermal evaporation in high vacuum of a pure (98%) commercially available source. All the samples were grown at room temperature (25 °C) and high deposition rates (>20 Å/s) on Corning ...
  • Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2002-04)
    Article
    Accés restringit per política de l'editorial
    Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors ...
  • Thin IBC c-Si solar cells based on conventional technologies 

    Jin, Chen; Martín García, Isidro; Calle Martín, Eric; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Alcubilla González, Ramón (WIP Renewable Energies, 2016)
    Text en actes de congrés
    Accés restringit per política de l'editorial
    Reducing the wafer thickness for c-Si solar cell fabrication is an effective approach for cost-savings. Interdigitated Back Contacts (IBC) technology is a promising candidate to be applied to thin c-Si substrates due to ...
  • Thin-film transistors with polymorphous silicon active layer 

    Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Orpella García, Alberto; Alcubilla González, Ramón; Fontcuberta Morral, Anna; Tripathi, V; Roca, P (2002-04)
    Article
    Accés restringit per política de l'editorial
    Hydrogenated silicon thin films were obtained by plasma enhanced chemical vapour deposition under plasma conditions close to the formation of powder. By that means microcrystalline, polymorphous and amorphous silicon layers ...
  • Characterization and application of a-SiCx:H films for the passivation of the c-Si surface 

    Martin Campos, Ignacio Clemente; Vetter, M; Orpella García, Alberto; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Marsal, L F; Pallarès Marzal, Josep; Alcubilla González, Ramón (2002-01)
    Article
    Accés restringit per política de l'editorial
    In this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement ...
  • Surface passivation of p-type crystalline Si by plasma enhanced vapour deposited amorphous SiCx Films 

    Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Puigdollers i González, Joaquim; Cuevas, A; Alcubilla González, Ramón (2001-10)
    Article
    Accés restringit per política de l'editorial
    Excellent passivation properties of intrinsic amorphous silicon carbide (a-SiCx:H) films deposited by plasma enhanced chemical vapor deposition on single-crystalline silicon (c-Si) wafers have been obtained. The dependence ...
  • Stability of hidrogenated nanocrystalline silicon thin-film transistors 

    Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Dosev, D; Fonrodona, Marta; Soler Vilamitjana, David; Bertomeu Balaguero, Joan; Asensi, J M; Andreu Batallé, Jordi; Alcubilla González, Ramón (2001-09)
    Article
    Accés restringit per política de l'editorial
    Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over ...
  • Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition 

    Dosev, D K; Puigdollers i González, Joaquim; Orpella García, Alberto; Voz Sánchez, Cristóbal; Fonrodona, Marta; Soler Vilamitjana, David; Marsal, L F; Pallarès Marzal, Josep; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2001-02)
    Article
    Accés obert
    The stability under gate bias stress of unpassivated thin film transistors was studied by measuring the transfer and output characteristics at different temperatures. The active layer of these devices consisted of in ...
  • Fabrication and characterization of in-situ doped a-Si0.8C0.2 emitter bipolar transistors 

    Orpella García, Alberto; Puigdollers i González, Joaquim; Bardés Llorensí, Daniel; Alcubilla González, Ramón; Marsal, L F; Pallarès Marzal, Josep (2000-09)
    Article
    Accés restringit per política de l'editorial
    Silicon–carbon emitters were deposited by plasma enhanced chemical vapour deposition (PECVD) on a conventional silicon transistor base. The resulting transistors were annealed after the emitter had been deposited which led ...
  • Thin film transistors obtained by hot wire CVD 

    Puigdollers i González, Joaquim; Orpella García, Alberto; Dosev, D; Voz Sánchez, Cristóbal; Peiró, D; Pallarés, J; Marsal, L F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2000-05)
    Article
    Accés restringit per política de l'editorial
    Hydrogenated microcrystalline silicon films obtained at low temperature (150–280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) ...
  • A compact charge ratio expression for the emitter delay of polysilicon emitter bipolar transistors 

    Castañer Muñoz, Luis María; Sureda, S; Bardés Llorensí, Daniel; Alcubilla González, Ramón (1994-03)
    Article
    Accés obert
    A compact solution for the ratio of the excess minority carrier charge stored into the polysilicon to the charge stored in the single crystal part of the emitter of a polysilicon emitter bipolar transistor is derived. The ...

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