El grup consta de 20 membres doctors. Es un grup de llarga trajectòria l’activitat del qual es centra en el desenvolupament i fabricació de dispositius semiconductors. Per això disposa d’un laboratori de fabricació “Sala Blanca” que constitueix un element vertebrador de l’activitat del grup. En particular la recerca es centra en les cèl•lules solars fotovoltaiques i en el desenvolupament de tecnologies de fabricació més econòmiques: tecnologia laser per cèl•lules solars de Silici, fabricació de cèl•lules HIT ( Heterojunction with thin Intrinsec layer ) , IBC (Intedigitated Back Contact), capes de passivació, cèl•lules orgàniques, termofotovoltaic. Un altre focus d’activitat son els cristalls fotònics 3D ja sia en Sililci com col•loïdals i tecnologies de manipulació de líquids a escala micromètrica.

http://futur.upc.edu/MNT

Research in micro and nanotechnology devices and their application in microelectronics, MEMSs, photonics and photovoltaic solar energy.

http://futur.upc.edu/MNT

Research in micro and nanotechnology devices and their application in microelectronics, MEMSs, photonics and photovoltaic solar energy.

http://futur.upc.edu/MNT

Enviaments recents

  • Sliding mode control of heterogeneous systems 

    Domínguez Pumar, Manuel; Gorreta Mariné, Sergio; Atienza García, María Teresa; Blokhina, Elena; Pons Nin, Joan (2017-06-01)
    Capítol de llibre
    Accés restringit per política de l'editorial
    This paper establishes a link between closed-loop controls for heterogeneous systems and sliding mode controls. We demonstrate that sliding mode analysis matches with experimental results from dielectric charge controllers. ...
  • Report F11 Consolider PV 

    Silvestre Bergés, Santiago (2011-02-09)
    Report de recerca
    Accés obert
    Procedimiento para la obtención de películas de materiales semiconductores incorporando una banda intermedia
  • Report 1 Consolider PV 

    Silvestre Bergés, Santiago (2010-09-09)
    Report de recerca
    Accés obert
    Thin films of GaAs(Ti), ranging from 90nm to 250 nm thick, were grown by sputtering on glass substrates.-Tof-SIMS measurements absorbance of reference samples and optical gap were evaluated.
  • Macroporous silicon. Technology and applications 

    Vega Bru, Didac; Rodríguez Martínez, Ángel (InTech - Open science/Open minds, 2017-06)
    Capítol de llibre
    Accés obert
    The knowledge of fundamental silicon questions and all aspects of silicon technology gives the possibility of improvement to both initial silicon material and devices on silicon basis. The articles for this book have been ...
  • Report 4 NASCENT 

    Puigdollers i González, Joaquim; Silvestre Bergés, Santiago (2017-02-22)
    Report de recerca
    Accés obert
    Análisis de configuracions tandem de cèl.lules solars de perovskita i IBC c_Si
  • Long-term stability of Al2O3 passivated black silicon 

    Calle, Eric; Ortega Villasclaras, Pablo Rafael; von Gastrow, Guillaume; Martín García, Isidro; Savin, Hele; Alcubilla González, Ramón (Elsevier, 2016)
    Comunicació de congrés
    Accés restringit per política de l'editorial
    In this work we report on the long-term stability of black silicon surfaces passivated with atomic layer deposited (ALD) 20 nm thick Al2O3 films on p- and n-type FZ c-Si substrates. The results are directly compared with ...
  • V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells 

    Masmitjà Rusiñol, Gerard; Gerling Sarabia, Luis Guillermo; Ortega Villasclaras, Pablo Rafael; Puigdollers i González, Joaquim; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Royal Society of Chemistry, 2017-05-21)
    Article
    Accés restringit per política de l'editorial
    Over the last few years, transition metal oxide layers have been proposed as selective contacts both for electrons and holes and successfully applied to silicon solar cells. However, better published results need the use ...
  • Recombination processes in passivated boron-implanted black silicon emitters 

    von Gastrow, Guillaume; Ortega Villasclaras, Pablo Rafael; Alcubilla González, Ramón; Husein, Sebastian; Nietzold, Tara; Bertoni, Mariana; Savin, Hele (American Institute of Physics (AIP), 2017-05-14)
    Article
    Accés restringit per política de l'editorial
    In this paper, we study the recombination mechanisms in ion-implanted black silicon (bSi) emitters and discuss their advantages over diffused emitters. In the case of diffusion, the large bSi surface area increases emitter ...
  • Statistical fault detection in photovoltaic systems 

    Garoudja, Elyes; Harrou, Fouzi; Sun, Ying; Kara, Kamel; Chouder, Aissa; Silvestre Bergés, Santiago (2017-07-01)
    Article
    Accés restringit per política de l'editorial
    Faults in photovoltaic (PV) systems, which can result in energy loss, system shutdown or even serious safety breaches, are often difficult to avoid. Fault detection in such systems is imperative to improve their reliability, ...
  • Influence of amorphous silicon carbide intermediate layer in the back-contact structure of Cu2ZnSnSe4 solar cells 

    Colina Brito, Mónica Alejandra; Martín García, Isidro; Giraldo, Sergio; Sánchez González, Yudania; Kondrotas, Rokas; Oliva, Florian; Izquierdo Roca, Víctor; Pérez Rodríguez, Alejandro; Coll Valentí, Arnau; Alcubilla González, Ramón; Saucedo Silva, Edgardo Ademar (2016-08-01)
    Article
    Accés obert
    Cu2 ZnSn(S1-ySey )4 (CZTS) thin-film solar cells have been qualified as potential competitors of the more established CIGS ones. One of the more important handicaps of CZTS solar cells is the open-circuit voltage deficit. ...

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