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Growth and physical properties of highly oriented La-doped (K,Na)NbO3 ferroelectric thin films
dc.contributor.author | Vendrell Villafruela, Xavier |
dc.contributor.author | Raymond, Oscar |
dc.contributor.author | Ochoa Guerrero, Diego A. |
dc.contributor.author | García García, José Eduardo |
dc.contributor.author | Mestres, Lourdes |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament de Física Aplicada |
dc.date.accessioned | 2015-07-09T11:27:19Z |
dc.date.available | 2017-02-28T01:30:19Z |
dc.date.created | 2015-02-27 |
dc.date.issued | 2015-02-27 |
dc.identifier.citation | Vendrell, X. [et al.]. Growth and physical properties of highly oriented La-doped (K,Na)NbO3 ferroelectric thin films. "Thin solid films", 27 Febrer 2015, vol. 577, p. 35-41. |
dc.identifier.issn | 0040-6090 |
dc.identifier.uri | http://hdl.handle.net/2117/28551 |
dc.description.abstract | Lead-free (K,Na)NbO3 (KNN) and La doped (K,Na)NbO3 (KNN-La) thin films are grown on SrTiO3 substrates using the chemical solution deposition method. The effect of adding different amounts of Na and K excess (0-20 mol%) is investigated. The results confirm the necessity of adding 20 mol% excess amounts of Na and K precursor solutions in order to avoid the formation of the secondary phase, K4Nb6O17, as confirmed by X-ray diffraction and Raman spectroscopy. Moreover, when adding a 20 mol% of alkaline metal excess, the thin films are highly textured with out-of-plane preferential orientation in the [100] direction of the [100] orientation of the substrate. Doping with lanthanum results in a decrease of the leakage current density at low electric field, and an increase in the dielectric permittivity across the whole temperature range (80-380 K). Although the (100)-oriented KNN and KNN-La films exhibited rounded hysteresis loops, at low temperatures the films show the typical ferroelectric hysteresis loops. (C) 2015 Elsevier B.V. All rights reserved. |
dc.format.extent | 7 p. |
dc.language.iso | eng |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Física |
dc.subject.lcsh | Ferroelectric thin films |
dc.subject.lcsh | Pyrolysis |
dc.subject.lcsh | Ceramics |
dc.subject.other | Chemical solution deposition |
dc.subject.other | (K0.5Na0.5)NbO3 |
dc.subject.other | Ferroelectric |
dc.subject.other | Thin films |
dc.subject.other | Pyrolysis temperature |
dc.subject.other | Electrical-properties |
dc.subject.other | Ceramics |
dc.title | Growth and physical properties of highly oriented La-doped (K,Na)NbO3 ferroelectric thin films |
dc.type | Article |
dc.subject.lemac | Ferroelectricitat |
dc.subject.lemac | Piròlisi |
dc.subject.lemac | Ceràmica |
dc.contributor.group | Universitat Politècnica de Catalunya. CEMAD - Caracterització Elèctrica de Materials i Dispositius |
dc.identifier.doi | 10.1016/j.tsf.2015.01.038 |
dc.relation.publisherversion | http://www.sciencedirect.com/science/article/pii/S0040609015000723 |
dc.rights.access | Open Access |
local.identifier.drac | 15578359 |
dc.description.version | Postprint (author’s final draft) |
local.citation.author | Vendrell, X.; Raymond, O.; Ochoa, D. A.; Garcia, J. E.; Mestres, L. |
local.citation.publicationName | Thin solid films |
local.citation.volume | 577 |
local.citation.startingPage | 35 |
local.citation.endingPage | 41 |
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