Advanced failure detection techniques in deep submicron CMOS integrated circuits
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The test of present integrated circuits exhibits many confining aspects, among them the adequate selection of the observable variables, the use of combined testing approaches, an each time more restricted controllability and observability (physically and electrically) and finally the required testing time. In the paper these points are discussed and different nowadays-promising techniques exposed. Complementarily to the logic output variable analysis (both value and delay) three efficient detection and localisation techniques can be considered that are contemplated in this work: the detection of light, heat and leakage currents due to the presence of failures. In most of the cases it is not possible to differentiate clearly, like was in the past, the production testing, the in-field testing, the test and the localisation of the failure, making each time closer the fields of testing and failure analysis.
CitacióRubio, A.; Altet, J.; Mateo, D. Advanced failure detection techniques in deep submicron CMOS integrated circuits. A: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis. "Reliability of electron devices, failure physics and analysis: 10th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 99), held in Arcachon, near Bordeaux, France from 5-8 October 1999". Arcachon: Pergamon Press, 2009, p. 909-918.
Versió de l'editorhttp://www.sciencedirect.com/science/article/pii/S0026271499001225#
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