Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections
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10.1016/j.microrel.2014.11.011
Inclou dades d'ús des de 2022
Cita com:
hdl:2117/27086
Tipus de documentArticle
Data publicació2015-02-01
Condicions d'accésAccés obert
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Abstract
Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon transistors. Boasting extraordinary electronic properties, CNFETs exhibit characteristics rivaling those of state-of-the-art Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). However, as any technology that is in development, CNFET fabrication process still have some imperfections that results in carbon nanotube variations, which can have a severe impact on the devices' performance and jeopardize their reliability (in this work the term reliability means time-zero failure due to manufacturing variations). This paper presents a study of the effects on transistors of the main CNFET manufacturing imperfections, including the presence of metallic carbon nanotubes (m-CNTs), imperfect m-CNT removal processes, chirality drift, CNT doping variations in the source/drain extension regions, and density fluctuations due to non-uniform inter-CNT spacing.
CitacióAlmudever, C.G.; Rubio, A. Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections. "Microelectronics reliability", 01 Febrer 2015, vol. 55, núm. 2, p. 358-366.
ISSN0026-2714
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Micro_sent_after_rev_CGA.pdf | 1,111Mb | Visualitza/Obre |