PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessRestricted access - publisher's policy
This work presents a study of the influence of different gate driver circuits on the switching behavior of SiC MOSFET devices used in a buck converter. The paper is based on several tests performed to determine the switching times and switching losses, using different reverse bias VGS voltage levels and different passive RCD (Resistance Capacitor Diode) circuits to interface the driver to the SiC MOSFET gate.
CitationBalcells, J. [et al.]. Improvement of driver to gate coupling circuits for SiC MOSFETS. A: IEEE International Symposium on Industrial Electronics. "IEEE 23rd International Symposium on Industrial Electronics (ISIE 2014): 1-4 June 2014: Grand Cevahir Hotel and Convention Center, Istanbul, Turkey: proceedings". Istanbul: Institute of Electrical and Electronics Engineers (IEEE), 2014, p. 521-525.
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