This paper presents recent measurements and
modeling of the third order intermodulation products of a Film
Bulk Acoustic Resonator (FBAR), for a various values of
frequency spacing between driving tones. The frequency
dependence of voltage and current in the acoustic branch rules
out a voltage-dependent nonlinearity. The results show different
slopes at resonance and antiresonance, which are correctly
adjusted by the model with a current dependent inductor and/or
capacitor. The intermodulation distortion is found to be
dependent on the frequency spacing between driving tones,
indicating memory effects.
CitationRocas, E; Collado, C; Mateu, J; Campanella, H; O'Callaghan, J.M. Third order intermodulation distorsion in film bulk acoustic resonators at resonance and antiresonance. IEEE MTT-S International Microwave Symposium Digest, 2008, Atlanta,GA, USA, p. 1259-1268.
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