Third order intermodulation distorsion in film bulk acoustic resonators at resonance and antiresonance
Document typeConference lecture
Rights accessOpen Access
This paper presents recent measurements and modeling of the third order intermodulation products of a Film Bulk Acoustic Resonator (FBAR), for a various values of frequency spacing between driving tones. The frequency dependence of voltage and current in the acoustic branch rules out a voltage-dependent nonlinearity. The results show different slopes at resonance and antiresonance, which are correctly adjusted by the model with a current dependent inductor and/or capacitor. The intermodulation distortion is found to be dependent on the frequency spacing between driving tones, indicating memory effects.
CitationRocas, E; Collado, C; Mateu, J; Campanella, H; O'Callaghan, J.M. Third order intermodulation distorsion in film bulk acoustic resonators at resonance and antiresonance. IEEE MTT-S International Microwave Symposium Digest, 2008, Atlanta,GA, USA, p. 1259-1268.
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