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Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells
dc.contributor.author | Colina Brito, Mónica Alejandra |
dc.contributor.author | Morales Vilches, Ana Belén |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Ortega Villasclaras, Pablo Rafael |
dc.contributor.author | López Rodríguez, Gema |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2015-01-13T09:48:02Z |
dc.date.available | 2017-05-02T00:30:36Z |
dc.date.created | 2014-10-05 |
dc.date.issued | 2015-05-01 |
dc.identifier.citation | Colina, M.A. [et al.]. Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells. "Applied surface science", 01 Maig 2015. |
dc.identifier.issn | 0169-4332 |
dc.identifier.uri | http://hdl.handle.net/2117/25234 |
dc.description.abstract | In this work the Laser Induced Forward Transfer (LIFT) technique is investigated to create n-doped regions on p-type c-Si substrates. The precursor source of LIFT consisted in a phosphorous-doped hydrogenated amorphous silicon layer grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) onto a transparent substrate. Transfer of the doping atoms occurs when a sequence of laser pulses impinging onto the doped layer propels the material toward the substrate. The laser irradiation not only transfers the doping material but also produces a local heating that promotes its diffusion into the substrate. The laser employed was a 1064 nm, lamp-pumped system, working at pulse durations of 100 and 400 ns. In order to obtain a good electrical performance a comprehensive optimization of the applied laser fluency and number of pulses was carried out. Subsequently, arrays of n + p local junctions were created by LIFT and the resulting J – V curves demonstrated the formation of good quality n+ regions. These structures were finally incorporated to enhance the front contact in conventional silicon heterojunction solar cells leading to an improvement of conversion efficiency |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Enginyeria dels materials::Materials funcionals::Materials elèctrics i electrònics |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
dc.subject | Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Processament del senyal |
dc.subject.lcsh | Solar cells |
dc.subject.lcsh | Materials -- Electric properties |
dc.subject.lcsh | Lasers -- Industrial applications |
dc.subject.other | LIFT |
dc.subject.other | Silicon heterojunction |
dc.subject.other | solarcell |
dc.subject.other | Laser direct-write |
dc.title | Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells |
dc.type | Article |
dc.subject.lemac | Cèl·lules solars |
dc.subject.lemac | Materials -- Propietats elèctriques |
dc.subject.lemac | Làsers -- Aplicacions industrials |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1016/j.apsusc.2014.09.172 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://www.sciencedirect.com/science/article/pii/S0169433214021722 |
dc.rights.access | Open Access |
local.identifier.drac | 15360027 |
dc.description.version | Postprint (author's final draft) |
local.citation.author | Colina, M.A.; Morales, A.; Voz, C.; Martin, I.; Ortega, P.; Lopez, G.; Alcubilla, R. |
local.citation.publicationName | Applied surface science |
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