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Emitter saturation current densities (JOe) of phosphorus-diffused planar c-Si solar cell emitters
passivated by silicon carbide (SiCx) layers have been determined in a wide sheet resistance range (20-500 Ω/sp). Phosphorus diffusions were performed using solid planar diffusion sources without
employing any drive-in step. Stacks of two SiCx layers were deposited by plasma enhanced
chemical vapor deposition: first a thin silicon rich layer with excellent passivating properties and
then an antireflective carbon rich layer. The thickness of the passivating layer was optimized,
reaching a trade-off between the better passivation achieved for thicker layers and the increased
light absorption within the layer, which reduced the photocurrent. The surface recombination
velocity and the optical losses were determined for each configuration and used to calculate
photovoltaic conversion efficiency limits for 50 and 90 Ω/sp emitters. In both cases, optimum
configuration is for the stacks with passivating layers that are about 8 nm thick.
CitationFerré, T.; Martín, I.; Ortega, P.; Vetter, M.; Torres, I.; Alcubilla, R. n-type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers. Journal of Applied Physics, 2006, vol. 100, 073703.
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