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P1-type hydrogenated amorphous silicon–carbon (a-Si12xCx :H) on n-type crystalline silicon
(c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal
annealing on the electrical transport properties of a-Si0.8C0.2 :H/c-Si diodes were investigated by
measuring their current–voltage characteristics. From the dark current–voltage characteristics
measured at different temperatures (298–373 K), transport mechanisms were analyzed in detail.
Two carrier transport mechanisms were found to be the origin of forward current. At low bias
voltage and temperatures above 320 K as-deposited diodes are dominated by recombination currents
on the amorphous side of the space charge region whereas annealed diodes are mainly dominated by
diffusion mechanisms. In contrast, at temperatures below 320 K, both types of diodes are mainly
dominated by multitunneling capture emission. At higher voltages, the current becomes space
charge limited for both diodes throughout the temperature range studied.
CitationMarsal, L.F.; Martín, I.; Pallarés, J.; Orpella, A.; Alcubilla, R. Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes. A: Journal of Applied Physics, 2003, v.94, p.2622-2626.
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