Rights accessRestricted access - publisher's policy
A completely dry low-temperature process has been developed to passivate 3.3 Ωcm p-type
crystalline silicon surface with excellent results. Particularly, we have investigated the use of a
hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide (a-SiCx:H)
deposition, without breaking the vacuum. We measured effective lifetime, Τ eff , through a
quasi-steady-state photoconductance technique. Experimental results show that hydrogen plasma
treatment improves surface passivation compared to classical HF dip. Seff values lower than 19
cm s -1 were achieved using a hydrogen plasma treatment and an a-SiCx:H film deposited at 300°C.
CitationMartín, I.; Vetter, M.; Orpella, A.; Voz, C.; Puigdollers, J.; Alcubilla, R.; Kharchenko, A.V.; Roca, P. Improvement of crystalline silicon surface passivation by hidrogen plasma treatment. A: Applied Physics Letters, 2004, v. 89, p. 1474-1746.
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder. If you wish to make any use of the work not provided for in the law, please contact: firstname.lastname@example.org