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The present paper provides an accurate drift-diffusion model of the graphene field-effect transistor (GFET). A precise yet mathematically simple current-voltage relation is derived by focusing on device physics at energy levels close to the Dirac point. With respect to previous work, our approach extends modeling accuracy to the low-voltage biasing regime and improves the prediction of current saturation. These advantages are highlighted by a comparison study of the drain current, transconductance, output conductance, and intrinsic gain. The model has been implemented in Verilog-A and is compatible with conventional circuit simulators. It is provided as a tool for the exploration of GFET-based integrated circuit design. The model shows good agreement with measurement data from GFET prototypes.
CitationLandauer, G.M.; González, J.L.; Jiménez, D. An accurate and Verilog-A compatible compact model for graphene field-effect transistors. "IEEE transactions on nanotechnology", 04 Juny 2014, vol. 13, núm. 5, p. 895-904.
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