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A compact noise model for carbon nanotube FETs
| dc.contributor.author | Landauer, Gerhard Martin |
| dc.contributor.author | González Jiménez, José Luis |
| dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
| dc.date.accessioned | 2014-03-17T13:45:21Z |
| dc.date.created | 2012 |
| dc.date.issued | 2012 |
| dc.identifier.citation | Landauer, G.M.; Gonzalez, J. A compact noise model for carbon nanotube FETs. A: International Semiconductor Conference Dresden-Grenoble. "2012 International Semiconductor Conference Dresden-Grenoble (ISCDG 2012): Grenoble, France: 24-26 September 2012". Grenoble: Institute of Electrical and Electronics Engineers (IEEE), 2012, p. 53-56. |
| dc.identifier.isbn | 9781467317177 |
| dc.identifier.uri | http://hdl.handle.net/2117/22161 |
| dc.description.abstract | This paper focuses on the development of a compact noise model for radiofrequency (RF) carbon nanotube field-effect transistors (CNFET). The noise mechanisms in these devices are discussed and the impact of the different noise sources is analyzed. For the RF-CNFET under investigation a mínimum noise figure NFmin = 0.104 dB at 60 GHz is predicted. Our model is usable with conventional circuit simulators, which provides a basis for further investigations on CNFET-based RF Building blocks. |
| dc.format.extent | 4 p. |
| dc.language.iso | eng |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
| dc.subject | Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica |
| dc.subject | Àrees temàtiques de la UPC::Enginyeria civil::Materials i estructures |
| dc.subject.lcsh | Nanotubes |
| dc.subject.lcsh | Nanostructured materials |
| dc.subject.other | Carbon nanotube |
| dc.subject.other | Field-effect transistor |
| dc.subject.other | Noise modeling |
| dc.subject.other | Radio frequency |
| dc.subject.other | Analog |
| dc.title | A compact noise model for carbon nanotube FETs |
| dc.type | Conference report |
| dc.subject.lemac | Nanotubs |
| dc.subject.lemac | Materials nanoestructurats |
| dc.contributor.group | Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
| dc.identifier.doi | 10.1109/ISCDG.2012.6359993 |
| dc.description.peerreviewed | Peer Reviewed |
| dc.relation.publisherversion | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6359993 |
| dc.rights.access | Restricted access - publisher's policy |
| local.identifier.drac | 13043904 |
| dc.description.version | Postprint (published version) |
| dc.date.lift | 10000-01-01 |
| local.citation.author | Landauer, G.M.; Gonzalez, J. |
| local.citation.contributor | International Semiconductor Conference Dresden-Grenoble |
| local.citation.pubplace | Grenoble |
| local.citation.publicationName | 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG 2012): Grenoble, France: 24-26 September 2012 |
| local.citation.startingPage | 53 |
| local.citation.endingPage | 56 |