Temperature as observable magnitude in silicon integrated circuits to characterize high frequency analog circuits
Document typeConference report
Rights accessRestricted access - publisher's policy
This paper introduces a novel on-chip measurement technique for the determination of the central frequency and 3dB bandwidth of a 60GHz power amplifier (PA) by performing low frequency temperature measurements in silicon integrated circuits. The techniques is implemented by using a temperature sensor embedded in the same silicon die as the PA, and placed in empty spaces next to it. Results confirm that temperature sensors can be used as functional built-in testers which serve to reduce testing costs and enhance yield as part of self-healing strategies.
CitationMateo, D. [et al.]. Temperature as observable magnitude in silicon integrated circuits to characterize high frequency analog circuits. A: International Conference on Materials Engineering for Resources. "ICMR 2013 AKITA: International Conference on Materials Engineering for Resources: November 20 Wed.-22 Fri., 2013: Akita View Hotel, Akita City, Japan". Akita City: 2013, p. 73-76.
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