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In this work, an assessment of different technology
trends (planar CMOS, FinFET and III-V MOSFETs) has been
carried out in front of some different reliability scenarios
(variability and soft errors). The logic circuits based on FinFET
devices have presented the best overall behavior, since we have
obtained the best performance and variability robustness.
Meanwhile, the III-V/Ge-based circuits have shown the best
electrical masking in front of soft errors disturbances.
CitationAmat, E.; Calomarde, A.; Rubio, J.A. Reliability study on technology trends beyond 20nm. A: International Conference Mixed Design of Integrated Circuits and Systems. "Mixed design of integrated circuits and systems MIXDES 2013: proceedings of the 20th international conference: Gdynia, Poland: 20-22 June 2013". Gdynia: Lodz University of Technology, 2013, p. 414-418.
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